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Enhanced Interdiffusion of GaAs-AlgaAs Interfaces Following Ion Implantation and Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

K. B. Kahen ,
G. Rajeswaran ,
D. L. Peterson ,
L. R. Zheng  and
N. L. Ott
K. B. Kahen
Affiliation:
Corporate Research Labs, Eastman Kodak Company, Rochester NY 14650-2011
G. Rajeswaran
Affiliation:
Corporate Research Labs, Eastman Kodak Company, Rochester NY 14650-2011
D. L. Peterson
Affiliation:
Corporate Research Labs, Eastman Kodak Company, Rochester NY 14650-2011
L. R. Zheng
Affiliation:
Corporate Research Labs, Eastman Kodak Company, Rochester NY 14650-2011
N. L. Ott
Affiliation:
Corporate Research Labs, Eastman Kodak Company, Rochester NY 14650-2011
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Abstract

The interdiffusion of GaAs-AlGaAs interfaces has been shown to be enhanced following ion implantation and rapid thermal annealing at approximately 950°C. A model is presented which explains this phenomenon. It is based on the solution of coupled diffusion equations involving the excess vacancy and Al distributions following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. The model is found to be in excellent agreement with several sets of experimental data. More specifically, the model is shown to be valid for ions which do not diffuse appreciably in the time frame of the rapid thermal annealing and for as-implanted vacancy concentrations below ∼6×1019 cm−3. Above that concentration, some vacancies are hypothesized to coalesce, thus being unavailable to assist in the enhanced interdiffusion process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 291
Copyright
Copyright © Materials Research Society 1989

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