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Enhanced Hydrogen Diffusion Under Illumination in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

P.V. Santos ,
N.M. Johnson  and
R.A. Street
P.V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, California 94304
N.M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, California 94304
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, California 94304
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Abstract

We provide experimental evidence for the fact that hydrogen diffusion in hydroge-nated amorphous silicon is controlled by the concentration of electronic carriers. It is experimentally demonstrated that the hydrogen diffusion coefficient (a) is enhanced if the carrier population is increased by illumination and (b) is strongly suppressed if carriers are extracted from the diffusion region by the application of an electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 353
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Kakalios, J. and Jackson, W.B., Amorphous Silicon and Related Materials, Ed. by Fritzsche, H. (World Scientific, Singapore, 1988), pp. 207.Google Scholar
[2] Kakalios, J., Street, R.A., and Jackson, W.B., Phys. Rev. Lett. 52, 1037 (1987).Google Scholar
[3] Street, R.A., Tsai, C.C., Kakalios, J., and Jackson, W.B., Phil. Mag. B, 56, 305 (1987).Google Scholar
[4] Weil, R., Busso, A., and Beyer, W., Appl. Phys. Lett. 53, 2477 (1988)Google Scholar
[5] Santos, P.V., Johnson, N.M., and Street, R.A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
[6] Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
[7] Beyer, W., Physica B 170, 105 (1991).Google Scholar
[8] Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B, 32, 23 (1985).Google Scholar
[9] Staebler, D.L., Crandall, R.S., and Williams, R., Appl. Phys. Lett. 39, 733 (1981).Google Scholar