Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-16T05:32:20.815Z Has data issue: false hasContentIssue false

Enhanced Control of Porous Thin Film Morphology via Ion Bombardment

Published online by Cambridge University Press:  01 February 2011

Michael D. Fleischauer
Affiliation:
mfleisch@ece.ualberta.ca, University of Alberta, Electrical and Computer Engineering, 9107-116 St. NW, Edmonton, T5K 2Y3, Canada
Jason B. Sorge
Affiliation:
jsorge@ualberta.ca, University of Alberta, Electrical and Computer Engineering, 9107-116 St. NW, Edmonton, Alberta, T5K 2Y3, Canada
Robert A. Joseph
Affiliation:
rjoseph@ualberta.ca, University of Alberta, Electrical and Computer Engineering, 9107-116 St. NW, Edmonton, Alberta, T5K 2Y3, Canada
Michael J. Brett
Affiliation:
brett@ece.ualberta.ca, University of Alberta, Electrical and Computer Engineering, 9107-116 St. NW, Edmonton, Alberta, T5K 2Y3, Canada
Get access

Abstract

Ion bombardment was used during and after the deposition of controlled-porosity thin films produced using the Glancing Angle Deposition (GLAD) technique. Post-deposition ion bombardment was used to mill vertical-post morphology GLAD films, whose constituent columns varied in size due to competition effects. Smaller columns, although in the minority, can have a significant impact on the function of these films in a variety of optics applications, and can only be avoided by pre-selecting column location (i.e. seeding). Uniform milling eliminated smaller columns and left only remnants of the largest columns, which then acted as seeds during subsequent depositions. This simple, non-lithographic technique leads to more uniform column morphology. Column tilt angle can also be adjusted using ion bombardment. Methods to tune column tilt angle as a function of ion current using ion-assisted deposition are discussed, with an emphasis on improved square spiral photonic band gap crystal fabrication. Ion bombardment was found to increase the tilt angle of each spiral arm, moving the architecture closer to the theoretical optimum structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Robbie, K. and Brett, M.J., J. Vac. Sci. & Tech. A 15, 1460 (1997).Google Scholar
2. Jensen, M.O. and Brett, M.J., Appl. Phys. A 80, 763 (2005).Google Scholar
3. Malac, M., Egerton, R.F., Brett, M.J., and Dick, B., J. Vac. Sci. & Tech. B 17, 2671 (1999).Google Scholar
4. Wang, W.H. and Chao, S., Opt. Lett. 23, 1417 (1998).Google Scholar
5. Hodgkinson, I. and Wu, Q.H., Mod. Phys. Lett. B 15, 1328 (2001).Google Scholar
6. Colgan, M.J., Vick, D. and Brett, M.J.,. Mat. Res. Soc. Symp. Proc. 636, D9.24 (2001).Google Scholar
7. Toader, O. and John, S., Science 292, 1133 (2001).Google Scholar
8. Harris, K.D., Westra, K.L., and Brett, M.J., Electrochem. Solid-State Lett. 4, C39 (2001).Google Scholar