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Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

  • Simone Severi (a1), Emmanuel Augendre (a2), Bartek Pawlak (a3), Pierre Eyben (a4), Taiji Noda (a5), Susan Felch (a6), Annelies Falepin (a7), Vijay Parihar (a8), Robert Schreutelkamp (a9), Wilfried Vandervorst (a10) and Kristin De Meyer (a11)...

Abstract

The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

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References

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1 Lindsay, R. et al., IJWT 2004
2 Severi, S. et al., IEDM 2004
3 Shima, A. et al., IEEE Trans. Elect. Dev. 2005
4 Jain, S. H. et al., IEEE Trans. Elect. Dev. 2005
5 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.
6 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.
7 kottantharayil, A. et al., VLSI 2004
8 Chong, Y. F. et al., IEEE Trans. Elect. Dev. 2004
9 Pawlak, B. J. et al., submitted to MRS 2006

Keywords

Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

  • Simone Severi (a1), Emmanuel Augendre (a2), Bartek Pawlak (a3), Pierre Eyben (a4), Taiji Noda (a5), Susan Felch (a6), Annelies Falepin (a7), Vijay Parihar (a8), Robert Schreutelkamp (a9), Wilfried Vandervorst (a10) and Kristin De Meyer (a11)...

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