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Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors

Published online by Cambridge University Press:  10 February 2011

C. P. Liu ,
C. B. Boothroyd  and
C. J. Humphreys
C. P. Liu
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
C. B. Boothroyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
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Abstract

Knowledge about compositional profiles on an atomic scale is important for semiconductor multilayers. In this paper, we attempt to quantify the Ti atomic fraction in a TixAll–xN multilayer and the total As concentrations in As δ-doped layers using energy-filtered imaging. These two materials represent materials where the characteristic energy loss edges are located in widely different energy losses with the L edge of Ti being above 450eV and that of As around 1350eV. The accuracy of the Ti atomic fraction in TixAll–xN is found to be around 10at% for specimens of uniform thickness made by focused ion beam milling, whereas the resolution and As concentration for the As containing δ-layer is found to be dominated by the signal to noise ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 159
Copyright
Copyright © Materials Research Society 1998

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