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Energy Up-Conversion at GaAs-GaInP2 and GaAs-AlGaInP2 Interfaces Caused by Cold Auger Processes

Published online by Cambridge University Press:  10 February 2011

F. A. J. M. Driessen ,
H. M. Cheong  and
A. Mascarehas
F. A. J. M. Driessen
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, fdriesen@nrel.gov
H. M. Cheong
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, fdriesen@nrel.gov
A. Mascarehas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401, USA, fdriesen@nrel.gov
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Abstract

Efficient, low-temperature luminescence at energies far above that of the exciting cw-laser is reported at junctions of GaAs-GaInP2 and GaAs-AlxGa1−x.InP2. The signal originates from the high-band gap layers and disappears only if the excitation energy is tuned below the GaAs band gap, as monitored by up-converted photoluminescence excitation spectroscopy. This shows that the non-linear process is induced by the generation of electrons and holes in the GaAs. Furthermore, it is found that the up-conversion is only observed if the (A1)GaInP2 layers are CuPtB long-range ordered. The reason for this is the inherent presence of metastable states in these ordered alloys. It is argued that cold Auger processes cause the nonlinear effect at these type I interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 85
Copyright
Copyright © Materials Research Society 1996

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