Skip to main content Accessibility help
×
Home

Energetics of Both Minority and Majority Carrier Transitions through Deep Defects in Wide Bandgap Pentenary Cu(In,Ga)(Se,S)2 Thin Film Solar Cells

  • Adam Halverson (a1), Shiro Nishiwaki (a2), William Shafarman (a3) and J. David Cohen (a4)

Abstract

We report and electronic and optical characterization of three wide-bandgap alloys of the Cu(InxGa1-x)(SeyS1-y)2 pentenary material system. Devices were characterized using admittance spectroscopy as well as drive-level capacitance profiling. The devices showed activated defect behavior typical of thin-film solar cell devices. Optical characterizations were carried out with Transient Photocapacitance and Transient Photocurrent spectroscopies. These data showed broad exponential bandtails with large Urbach energies, indicative of a moderately high degree of compositional and/or structural disorder. The temperature dependence of the TPC spectra was examined in detail and we were able to observe the thermal emission of electrons from defects into the conduction band. The emission energy of these features corresponds well with the measured optical threshold and the known bandgap of the cells. Thus we infer an upper bound of about 50meV for the lattice relaxation energy following the optical transition into the defect.

Copyright

References

Hide All
1. Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., and Noufi, R., Prog. Photovolt.: Res. Appl. 7, 311 (1999).
2. Herberholz, R., Nadenau, V., Rühle, U., Köble, C., Schock, H.W., and Dimmler, B., Sol. En. Mat. Solar Cells 49, 227 (1997).
3. Heath, J.T., Cohen, J.D., Shafarman, W.N., Liao, D. X. and Rockett, A. A., Appl. Phys. Lett. 80, 4540 (2002).
4. Turcu, M. and Rau, U., Thin Solid Films 431–432,158 (2003).
5. Heath, J.T., Cohen, J.D., and Shafarman, W.N., J. Appl. Phys. 95, 1000 (2004).
6. Halverson, A.F., Erslev, P.T., Lee, J., Cohen, J.D., and Shafarman, W. N., Mater. Res. Soc. Symp. Proc. 865, 519 (2005).
7. Michelson, C.E., Gelatos, A.V., and Cohen, J.D., Appl. Phys. Lett. 47, 412 (1985).
8. Gelatos, A.V., Cohen, J.D., and Harbison, J.P., Appl. Phys. Lett. 49, 722 (1986).
9. Gelatos, A.V., Mahavadi, K.K., Cohen, J.D., and Harbison, J.P., Appl. Phys. Lett. 53, 403 (1988).
10. Bonalde, I., Medina, E., Rodríguez, M., Wasim, S.M., Marín, G., and Rincón, C., Phys. Rev. B, 69, 2004, 195201.

Keywords

Energetics of Both Minority and Majority Carrier Transitions through Deep Defects in Wide Bandgap Pentenary Cu(In,Ga)(Se,S)2 Thin Film Solar Cells

  • Adam Halverson (a1), Shiro Nishiwaki (a2), William Shafarman (a3) and J. David Cohen (a4)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed