Skip to main content Accessibility help

Encapsulation of graphene interconnects with 2D Layered Insulator for improved performance

  • Nikhil Jain (a1) and Bin Yu (a1)


The key material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h-BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without top passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and maximum power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior much less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h-BN heterostructure presents a robust material platform towards the implementation of high-performance carbon-based interconnects.


Corresponding author


Hide All
[1] Steinhogl, W, Schindler, G, Steinlesberger, G, Traving, M and Engelhardt, M 2005 Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller Journal of Applied Physics 97 023706–023706–7
[2] Steinlesberger, G, Engelhardt, M, Schindler, G, Steinhögl, W, Von Glasow, A, Mosig, K and Bertagnolli, E 2002 Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes Microelectronic Engineering 64 409–16
[3] Davis, J A, Venkatesan, R, Kaloyeros, A, Beylansky, M, Souri, S J, Banerjee, K, Saraswat, K C, Rahman, A, Reif, R and Meindl, J D 2001 Interconnect limits on gigascale integration (GSI) in the 21st century Proceedings of the IEEE 89 305–24
[4] Wang, P-C and Filippi, R G 2001 Electromigration threshold in copper interconnects Applied Physics Letters 78 3598–600
[5] Geim, A K and Novoselov, K S 2007 The rise of graphene Nat Mater 6 183–91
[6] Chen, J-H, Jang, C, Xiao, S, Ishigami, M and Fuhrer, M S 2008 Intrinsic and extrinsic performance limits of graphene devices on SiO2 Nat Nano 3 206–9
[7] Dean, C R, Young, A F, Meric, I, Lee, C, Wang, L, Sorgenfrei, S, Watanabe, K, Taniguchi, T, Kim, P, Shepard, K L and Hone, J 2010 Boron nitride substrates for high-quality graphene electronics Nat Nano 5 722–6
[8] Jain, N, Bansal, T, Durcan, C and Yu, B 2012 Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate IEEE Electron Device Letters 33 925–7
[9] Zhong, X, Amorim, R G, Scheicher, R H, Pandey, R and Karna, S P 2012 Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride Nanoscale 4 5490–8
[10] Mayorov, A S, Gorbachev, R V, Morozov, S V, Britnell, L, Jalil, R, Ponomarenko, L A, Blake, P, Novoselov, K S, Watanabe, K, Taniguchi, T and Geim, A K 2011 Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature Nano Lett. 11 2396–9
[11] Wang, H, Taychatanapat, T, Hsu, A, Watanabe, K, Taniguchi, T, Jarillo-Herrero, P and Palacios, T 2011 BN/Graphene/BN Transistors for RF Applications IEEE Electron Device Letters 32 1209–11


Encapsulation of graphene interconnects with 2D Layered Insulator for improved performance

  • Nikhil Jain (a1) and Bin Yu (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed