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Emitter-Base Separation Techniques for Resonant Tunneling Light Emitting Transistors

Published online by Cambridge University Press:  21 February 2011

Jan Genoe ,
C. Van Hoof  and
G. Borghs Imec
Jan Genoe
Affiliation:
Kapeldreef 75, B-3001 Leuven, Belgium.
C. Van Hoof
Affiliation:
Kapeldreef 75, B-3001 Leuven, Belgium.
G. Borghs Imec
Affiliation:
Kapeldreef 75, B-3001 Leuven, Belgium.
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Abstract

The realisation of resonant tunneling transistors with a quantum-well base layer requires good Ohmic contacts on a two-dimensional electron gas. Both a good base-emitter separation and a good base-collector separation without the depletion of the base layer are essential requirements. The depletion of the base layer would prevent the injection of base current. Also the penetration of the contact metal needs to be restricted to prevent destruction of the two-dimensional electron gas layer. A 100 nm base-emitter separation can be obtained using a self-aligned base etching combined with the PdGe non-alloyed contact technology. A 10 nm wide quantum well spacer layer prevents the quantum-well consumption by the PdGe regrowth and allows the charging of the base layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 431
Copyright
Copyright © Materials Research Society 1994

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References

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