Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-25T19:09:08.060Z Has data issue: false hasContentIssue false
  • English
  • Français

Emission Mechanism of the InGaN MQW Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

Yukio Narukawa ,
Yoichi Kawakami ,
Shizuo Fujita ,
Shigeo Fujita  and
Shuji Nakamura
Yukio Narukawa
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606–01, Japan
Yoichi Kawakami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606–01, Japan
Shizuo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606–01, Japan
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606–01, Japan
Shuji Nakamura
Affiliation:
Department of Research and Development, Nichia Chemical Industries Ltd, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
Get access

Abstract

Dynamical behavior of radiative recombination has been assessed in the In0.20Ga0.80N (3nm)/In0.05Ga0.95N (6 nm) multiple quantum well (MQW) structure by means of transmittance (TR), electroreflectance (ER), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopy. The PL at 20 K was mainly composed of two emission bands whose peaks are located at 2.920 eV and 3.155 eV. The ER and PLE revealed that the transition at 3.155 eV is due to the excitons at quantized level between n=1 conduction and n=1 A(Γ9υ) valence bands, while the main PL peak at 2.920 eV is attributed to the excitons localized at the trap centers within the well. The TRPL features were well understood as the effect of localization where photo-generated excitons are transferred from the n=1 band to the localized centers, and then are localized further to the tail state. The origin of the localized centers were attributed to the In-rich region in the wells acting as quantum dots which could be observed by transmission electron microscopy (TEM) and energy-dispersive X-ray microanalysis (EDX).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 665
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., Jpn. J. Appl. Phys. 34, L797 (1995).Google Scholar
[2] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
[3] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L217 (1996).Google Scholar
[4] Akasaki, I., Sota, S.,Sakai, H.,Tanaka, T., Koike, M., and Amano, H., Electron. Lett. 32, 1105 (1996).Google Scholar
[5] Itaya, K. et al., Jpn. J. Appl. Phys. 35, L1315 (1996).Google Scholar
[6] Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., J. Appl. Phys. 79, 2784 (1996).Google Scholar
[7] Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz., Fujita, Sg. and Nakamura, S., in press Phys. Rev.BGoogle Scholar
[8] Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz., Fujita, Sg. and Nakamura, S., submitted to Appl. Phys. Lett.Google Scholar
[9] Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).Google Scholar
[10] Okada, K., Yamada, Y., Taguchi, T., Sakaki, F., Kobayashi, S., Tani, T., Nakamura, S. and Shinomiya, G., Jpn. J. Appl. Phys. 35, L787 (1996).Google Scholar
[11] Kawakami, Y., Peng, Z. G., Narukawa, Y., Fujita, Sz., Fujita, Sg. and Nakamura, S., Appl. Phys. Lett. 69, 1414 (1996).Google Scholar
[12] Sugawara, M., Jpn. J. Appl. Phys. 35, 124 (1996).Google Scholar
[13] Chichibu, S. Azuhata, T., Sota, T. and Nakamura, S., presented at 30th Electronic Materials Conference, W-l0, June 26–28, Santa Barbara, (1996).Google Scholar
[14] Chichibu, S.,Azuhata, T., Sota, T. and Nakamura, S., in press Appl. Phys. Lett.Google Scholar
[15] The value of alloy broadening can be estimated by taking into account the standard deviation of alloy composition within the volume of excitons. See for example:Zimmerman, R., Cryst, J.. Growth 101, 346(1990).Google Scholar
[16] Aspnes, D. E. and Rowe, J. E., Phys. Rev. Lett. 27, 188 (1971).Google Scholar
[17] Dingle, R., Sell, D. D., Stokowski, S. E. and Ilegems, M., Phys. Rev. B4, 1211(1971).Google Scholar
[18] Gil, B., Briot, O. and Aulombard, R. , Phys. Rev. B52, R17028 (1995).Google Scholar
[19] Gourdon, C. and Lavallard, P., Phys. Stat. Solidi, (b) 153, 641 (1989).Google Scholar
[20] Yamaguchi, S., Kawakami, Y., Fujita, Sz., Fujita, Sg., Yamada, Y., Mishina, T. and Masumoto, Y., Phys. Rev. B 54, 2629 (1996).Google Scholar
[21] This range corresponds to the angle of 30 °.Google Scholar
[22] This method was reported to be effective to characterize the self-formed In0.5Ga0.5 As quantum dots. See for example,Mukai, K., Ohtsuka, N., Sugawara, M. and Yamazaki, S., Jpn. J. Appl. Phys. 33, L1710 (1994).Google Scholar
[23] Large localization of excitons is also reported in the InGaN single epilayer.: Taguchi, T., Maeda, T., Yamada, Y., Nakamura, S. and Shinomiya, G., Proc. of Intern. Symp. on Blue Laser and Light Emitting Diodes, Chiba Univ., Japan, March 5-7, 372 (1996).Google Scholar
[24] Ho, I-hisu and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701 (1996).Google Scholar