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Ellipsometric Study of the Interface Between Silicon and Silica

  • R. H. Doremus (a1) and S. C. Kao (a2)

Abstract

Ellipsometric measurements of surfaces of oxidized silicon give information on the optical properties, structure and composition of the interface between the silicon and oxide. From such measurements in ambient liquids with different refractive indices, some close to that of the oxide, we conclude that there is an interfacial layer about one nm thick at all oxide thicknesses. This layer is either a transition layer of partially oxidized silicon or a layer of silicon of higher absorption than bulk silicon. The oxide has the refractive index of vitreous silica at all thicknesses.

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1 Kao, S. C., PhD Thesis, Rensselaer Polytechnic Institute, 1992.
2 Hattori, T. and Suzuki, T., Appl. Phys. Lett. 43, 470 (1983).
3 Hollinger, G., Saoudi, R., Ferret, P., and Pitaval, M., in The Physics and Chemistry of SiO2 and Si-SiO2 Interfaces, edited by Helms, C. R. and Deal, B. E., (Plenum Press, New York, 1988), p. 211.
4 Grunthaner, P. J., Hecht, M. N., Grunthaner, F. J., Johnson, N. M., J. Appl. Phys., 61, 629 (1987).
5 Niwano, M. et al. , J. Vac. Sci. Tech. A9 , 195 (1991).
6 Carim, A. H. and Sinclair, R., J. Elec. Soc., 134, 741 (1987).
7 Ourmazd, A., Taylor, D. W., Rentschler, J. A., Bevk, J., Phys. Rev. Lett. 59 , 213 (1987).
8 Fuoss, P. H., Norton, L. J., Brennan, S., Fischer-Colbrie, A., Phys. Rev. Lett. 60 , 600 (1988).
9 Taft, E. and Cordes, L., J. Electr. Soc. 126, 131 (1979).
10 Aspnes, D. E. and Theeten, J. B., J. Electr. Soc. 127, 1359 (1980).
11 Jellison, G. E., J. Appl. Phys., 69, 7627 (1991).
12 Pedinoff, M. E., Mayer, D. C., Stafsudd, O. M., Dunn, G. L., Appl. Optics 21, 3307, (1982).
13 Chao, T. S., Lee, C. S., Lee, T. F., J. Electr. Soc. 138, 1756 (1991).
14 Kalmitsky, A. et al. , J. Electr. Soc. 137, 235 (1990).
15 Schwarz, S. A., Barton, R. W., Ho, C. P., and Helms, C. R., J. Electr. Soc. 128, 110 (1981).
16 Vedam, K., Rai, R., Lukes, F., Srinivasan, R., J. Opt. Soc. Am. 58 , 526 (1968).
17 Yakovlev, V. A. and Irene, E. A., J. Electrochem. Soc. 139, 1450 (1992).
18 Bravman, J. C. and Sinclair, R., J. Electron Micro. Tech. 1, 53 (1984).
19 Taft, E. A., J. Electr. Soc. 125, 968 (1978).
20 Hulthen, R., Physica Scripta 12, 342 (1975).
21 Russo, O. L., J. Electr. Soc. 127, 953 (1980).
22 Kao, S. C. and Doremus, R. H., in The Physics and Chemistry of SiO. and the Si-SiO2 , Interface, edited by Helms, C. R. and Deal, B. R. (Plenum Press, New York, 1993), p. 23.
23 Jacodine, R. J. and Schlegl, W. A., J. Appl. Phys. 37 , 2429 (1966).
24 Kobeda, E. and Irene, E. A., J. Vac. Sci. Tech. B4 , 720 (1986); B5 , 15 (1987); B6 , 474 (1988).
25 Fitch, J. T., Bjorkman, C. H., Lucovsky, G., Pollak, F. H. and Yin, X., J. Vac. Sci. Tech. B7 , 775 (1989).
26 Lucovsky, G., Manitini, M. J., Srivastava, J. K., and Irene, E. A., ibid B5 , 530 (1987).

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