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Elementary Analysis Of Line Shapes And Energy Resolution In Semiconductor Radiation Detectors

  • J. E. Toney (a1), T. E. Schlesinger (a2), B. A. Brunett (a2) and R. B. James (a3)

Abstract

We have used an elementary statistical technique to derive a closed-form expression for the hole-tailing line shape produced by photoelectric absorption of monoenergetic radiation in a semiconductor X-ray/γ-ray detector. In the case of compound semiconductors, where the drift length for electrons is much greater than that for holes, the line shape is given by a type of power law, except for a small region very near the photopeak. This analytical result agrees well with Monte Carlo simulations and is used to extract approximate μτ products from a 57Co pulse height spectrum. We also present an expression for the maximum obtainable energy resolution of a semiconductor detector in the presence of leakage current noise and intrinsic statistical fluctuations as a function of material parameters, along with a chart of the optimal band gap as a function of temperature and photon energy. Based on these considerations, the optimal band gap for room-temperature operation is approximately 2.0 eV.

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1. Franzen, W. and Cochran, C.W. in Nuclear Instruments and their Uses, edited by Snell, A.H., (Wiley, New York, 1962), p. 3.
2. Trammell, R. and Walter, F.J., Nucl. Instr. Meth. 76, p. 317 (1969).
3. Toney, J.E., Uniformity and Defects in Cadmium Zinc Telluride with Application to Nuclear Radiation Detectors (doctoral dissertation, Carnegie Mellon University, Pittsburgh, PA, 1998).
4. Toney, J.E., Schlesinger, T.E. and James, R.B., submitted to IEEE Trans. Nucl. Sci. (1997).

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Elementary Analysis Of Line Shapes And Energy Resolution In Semiconductor Radiation Detectors

  • J. E. Toney (a1), T. E. Schlesinger (a2), B. A. Brunett (a2) and R. B. James (a3)

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