Skip to main content Accessibility help
×
Home

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

  • Anupama B. Kaul (a1), Paul Khan (a2), Andrew T. Jennings (a3), Julia Greer (a4), Krikor G. Megerian (a5) and Paul von Allmen (a6)...

Abstract

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V – 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built nanoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

Copyright

References

Hide All
1 Kim, P. and Lieber, C. M., Science 286, 2148 (1999).10.1126/science.286.5447.2148
2 Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., et al., Science 289, 94 (2000).10.1126/science.289.5476.94
3 Collins, P. G., Bradley, K. B., Ishigamo, M., and Zettl, A., Science 287, 120 (2000).10.1126/science.287.5459.1801
4 Sazonova, V., Yaish, Y., Ustunel, H., Roundy, D., Arias, T. A., and McEuen, P. L., Nature 431, 284 (2004).10.1038/nature02905
5 Lee, S. W., Lee, D. S., Morjan, R. E., Jhang, S. H., Sveningsson, M., Nerushev, O. A., Park, Y. W., and Campbell, E. E. B., Nano. Lett. 4, 2027 (2004).10.1021/nl049053v
6 Cha, S. N., Jang, J. E., Choi, Y., and Amaratunga, G. A. J., Kang, D. J., Hasko, D. J., Jung, J. E. and Kim, J. M., Appl. Phys. Lett. 86, 083105–1 (2005).10.1063/1.1868064
7 Dujardin, E., Derycke, V., Goffman, M. F., et al., Appl. Phys. Lett. 87, 193107–1 (2005).10.1063/1.2126805
8 Allmen, P. von, Vo, T., Megerian, K., Baron, R. L. and Kaul, A. B., “Switching voltage in a carbon nanotube memory device,” Mat. Res. Soc. Symp. Proc., vol. 1186E (in press).
9 Vo, T., Allmen, P. von, and Kaul, A. B., “Parallel polarizability of metallic carbon nanotubes,” Mat. Res. Soc. Symp. Proc., vol. 1177E (in press).
10 Kaul, A. B., Megerian, K., Allmen, P. von, and Baron, R. L., Nanotech. 20, 075303 (2009).10.1088/0957-4484/20/7/075303
11 Kaul, A. B., Khan, A., Bagge, L., Megerian, K. G., LeDuc, H. G., and Epp, L., Appl. Phys. Lett. vol. 95, 093103, Aug. 2009.10.1063/1.3211851
12 Brinkmann, S., Kim, J-Y, and Greer, J. R., Phys. Rev. Lett. 100, 155502 (2008).10.1103/PhysRevLett.100.155502
13COMSOL Multiphysics Version 3.4, COMSOL AB, Tegnérgatan 23, SE-111 40, Stockholm, Sweden. www.comsol.com.

Keywords

Related content

Powered by UNSILO

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

  • Anupama B. Kaul (a1), Paul Khan (a2), Andrew T. Jennings (a3), Julia Greer (a4), Krikor G. Megerian (a5) and Paul von Allmen (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.