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Electrophotographic Properties of n+-a-Si:H/a-Si:H/a-Sic:H Heterostructures

  • S. M. Paasche (a1) and G. H. Bauer (a1)


For negative charging electrophotographic applications a three layer heterostructure (Al/n+-a-Si:H/a-Si:H/a-SiC:H) has been investigated. To some extent a separation of the function of charge storage by a high band gap amorphous silicon carbon alloy and of that of photogeneration of carriers and of sufficient photosensitivity in an intrinsic amorphous silicon film has been achieved. Due to a low injection of electrons from the surface into the a-SiC:H and a small thermal generation rate of carriers within the a- Si:H film, the dark decay of the negative surface potential is dominated by space charge limited currents of holes. Thus a considerable difference in surface potential for negative and positive charging occurs, which is related to the difference in electron and hole mobility in a-Si:H. Since there is no remarkable barrier at the heterointerface a-Si:H/a-SiC:H an excellent injection of photogenerated holes into the a-SiC:H can be provided.



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Electrophotographic Properties of n+-a-Si:H/a-Si:H/a-Sic:H Heterostructures

  • S. M. Paasche (a1) and G. H. Bauer (a1)


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