Skip to main content Accessibility help
×
Home

Electronic Transport Properties of Cu/MnOx/SiO2/p-Si MOS Devices

  • Vijay Kumar Dixit (a1), Koji Neishi (a2) and Junichi Koike (a3)

Abstract

An ultrathin barrier layer of MnOx was grown using metal organic chemical vapor deposition (MOCVD) at an interface between Cu and SiO2 dielectric. The electronic transport properties of Cu/MnOx/SiO2/p-Si metal oxide semiconductor (MOS) devices showed leakage current density within the range of 10-8-10-7A/cm2 up to an electric field of 4MV/cm. The current density remained within the same range after bias temperature aging test at 3MV/cm for 6×103s at 550K. The capacitance-voltage curves of the MOS device having the MnOx layer grown at 473K do not show significant shift of flat band voltage after thermal annealing at 673K for 3.6×103s as well as after bias temperature aging test at 1MV/cm, 550K for 2.4×103 s. These results indicate that the ultrathin layer of MnOx is stable under the above conditions and prevents sufficiently Cu ion diffusion into the SiO2 dielectric.

Copyright

References

Hide All
1 Murarka, P. Metallization - Theory and Practice for VLSI-ULSI (Butterworth-Heineman, Boston, 1993).
2International Technology Roadmap for Semiconductors, Semiconductor Industry Association (2003).
3 Neishi, K. Aki, S. Matsumoto, K. Sato, H. Itoh, H. Hosaka, S. and Koike, J. Appl. Phys. Lett., 93, 032106, (2008).
4 Dixit, V. K. Neishi, K. Akao, N. and Koike, J. (Unpublished).
5 Murarka, S.P. Verner, I. V. Gutmann, R. J. Copper - fundamental mechanisms for microelectronic applications, (Wiley, New York, 2000).
6 Usui, Takamasa, Nasu, Hayato, Takahashi, Shingo, Shimizu, Noriyoshi, Nishikawa, T. Yoshimaru, Masaki, Shibata, Hideki, Wada, Makoto, and Koike, Junichi. IEEE Transactions on Electron Devices, 53, 2492, (2006).
7 Felipe, T. Suwwan de, Ph. D Thesis, Rensselaer Polytechnic Institute, Troy, NY, (1998).
8 Felipe, T. Suwwan de, Murarka, S. P. Bedell, S. and Lanford, W. A. J. Vac. Sci. Technol. B, 15, 1987 (1997).

Keywords

Electronic Transport Properties of Cu/MnOx/SiO2/p-Si MOS Devices

  • Vijay Kumar Dixit (a1), Koji Neishi (a2) and Junichi Koike (a3)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed