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Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

  • Hiroaki Yamada (a1), Takeshi Yoshimura (a1) and Norifumi Fujimura (a1)

Abstract

The electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

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Keywords

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

  • Hiroaki Yamada (a1), Takeshi Yoshimura (a1) and Norifumi Fujimura (a1)

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