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Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

Q.X. Zhao  and
M. Willander
Q.X. Zhao
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
M. Willander
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
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Abstract

Energy levels of the shallow acceptor states have been calculated for center-doped Si/Si1−xGex/Si quantum wells (QWs). The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. Acceptor binding energies and splitting between the acceptor 1S3/2(Γ7) and 1S3/2(Γ6) ground states were studied at various Ge concentrations and well widths. The results are discussed in comparison with the recent experimental data from the lateral transport measurements in boron-doped Si/SiGe quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 273
Copyright
Copyright © Materials Research Society 2000

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References

1 Contreras, H. Navarro, Orta, R.A. Brito, Timusk, T., Datars, W.R., Houghton, D.C., Solid State Communications 90, 311 (1994).Google Scholar
2 Willander, M., Heterojunction Transistors and Small Size Effects in Devices, Edited by Willander, M. (Chartwell-Bratt Ltd., Lund, 1992), p 195.Google Scholar
3 Yassievich, I.N., Schmalz, K., Odnoblyudov, M.A., Kagan, M.S., Solid State Electronics 40, 97 (1996).Google Scholar
4 Schmalz, K., Kagan, M.S., Altukhov, I.V., Korolev, K.A., Orlev, D.V., Sinis, V.P., Tomas, S.G., Wang, K.L., and Yassievich, I.N., Materials Science Forum Vol.258–263, pt.3, 1613 (1997).Google Scholar
5 Altukhov, I.V., Chirkova, E.G., Kagan, M.S., Korolev, K.A., Sinis, V.P., and Yassievich, I.N., Phys. Stat. Sol. (b) 198, 35 (1996).Google Scholar
6 Zhao, Q.X. and Willander, M., Phys. Rev. B 57, 13033 (1998).Google Scholar
7 Zhao, Q.X. and Willander, M., J.Appl. Phys. 86, 5624 (1999).Google Scholar
8 Pasquarello, A., Andreani, L.C., and Buczko, R., Phys. Rev. B 40, 5602 (1989).Google Scholar
9 Fraizzoli, S., and Pasquarello, A., Phys. Rev. B 42, 5349 (1990); B44, 1118 (1991).Google Scholar
10 Thewalt, M.L., Harrison, D.A., Reinhart, C.F., Wolk, J.A., and Lafontaine, H., Phys. Rev. Lett. 79, 269 (1997).Google Scholar
11 Robbins, D.J., Canham, L.T., Barbett, S.J., Pitt, A.D., Calcott, P., J. Appl. Phys. 71, 1407 (1992).Google Scholar
12 Pollak, F.H. and Cardona, M., Phys. Rev. 172, 816 (1968).Google Scholar
13 Lipari, N.O., Baldereschi, A., and Thewalt, M.L.W., Solid State Communications 33, 277 (1980).Google Scholar