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Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors

  • Kee Joo Chang (a1), Byungki Ryu (a1), Hyeon-Kyun Noh (a1), Junhyeok Bang (a2) and Eun-Ae Choi (a3)...

Abstract

First-principles density functional calculations are performed to investigate the electronic properties of O-vacancy defects in high-k HfO2, Si/HfO2 interface, and amorphous oxide semiconductors. The role of O-vacancy in device performance is discussed by comparing the results of the GGA, hybrid density functional, and quasiparticle energy calculations.

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COPYRIGHT: © Materials Research Society 2011

References

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Keywords

Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors

  • Kee Joo Chang (a1), Byungki Ryu (a1), Hyeon-Kyun Noh (a1), Junhyeok Bang (a2) and Eun-Ae Choi (a3)...

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