Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T09:03:07.399Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structure of Defects in Amorphous Silicon Nitride

Published online by Cambridge University Press:  22 February 2011

John Robertson
John Robertson*
Affiliation:
National Power Labs, Leatherhead, Surrey KT22 7SE, UK.
Get access

Abstract

The paper reviews the electronic properties of defects in amorphous silicon nitride (a-Si3N4) and the hydrogenated alloys a-SiNx:H. The main defects in a-Si3N4 are the Si and N dangling bonds (DBs). The Si DB forms a sp3 state near midgap, while the N DB forms a highly localized pπ level just above the valence band edge. The behaviour of the alloys changes near x ≈ 1.1, the percolation threshold of Si-Si bonds. In the Si-rich alloys, both band edges are Si-like, only Si DBs are seen and their density is controlled by equilibration with weak Si-Si bonds. The x>1.1 alloys behave like silicon nitride; the valence band changes towards N pπ-like, both Si and N DBs can arise, the Si DB can have a high density and prefers to be in its charged diamagnetic configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 65
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Robertson, J, Phil Mag B 63 47 (1991)Google Scholar
2 Robertson, J, Powell, M J, App Phys Lett 44 415 (1984)Google Scholar
3 Warren, W L, Kanicki, J, Fong, F C, Poindexter, E H, J Electrochem Soc 139 880 (1992)Google Scholar
4 Yin, Z, Smith, F W, J Non-Cryst Solids 137 871 (1991)Google Scholar
5 Hasegawa, S, Matsuda, M, Kurata, Y, App Phys Lett 57 2211 (1990)Google Scholar
6 Yin, Z, Smith, F W, J Non-Cryst Solids 137 879 (1991)Google Scholar
7 Tsu, D V, Lucovsky, G, Mantini, M J, Phys Rev B 33 7069 (1986)Google Scholar
8 Smith, D L, Alimonda, A S, Chen, C, Ready, S, Wacker, R, J Electrochem Soc 137 614 (1990);Google Scholar
Hicks, S E, Gibson, R A, Plasma Proc Plasma Process 11 455 (1991)Google Scholar
9 Karcher, R, Ley, L, Johnson, R L, Phys Rev B 30 1896 (1992)Google Scholar
10 Iqbal, A, Jackson, W B, Tsai, C C, Allen, J W, Bates, C W, J App Phys 61 2947 (1987)Google Scholar
11 Hasegawa, S, Matuura, M, Kurata, Y, App Phys Lett 49 1272 (1986)Google Scholar
12 Spear, W E, Dunnett, B, LeComber, P G, Mat Res Soc Symp Proc 95 39 (1987)Google Scholar
13 Kanicki, J, Warren, W L, Seager, C H, Crowder, M S, Lenahan, P M, J Non-Cryst Solids 137 291 (1991)Google Scholar
14 Stewart, A D, Jones, D I, Phil Mag B 57 431 (1988)Google Scholar
15 Hasegawa, S, Matsuda, M, Kurata, Y, App Phys Lett 58 741 (1991)Google Scholar
16 Phillip, H R, J Electrochem Soc 120 295 (1973)Google Scholar
17 Krick, D T, Lenahan, P M, Kanicki, J, J App Phys 64 3558 (1988)Google Scholar
18 Lenahan, P M, Curry, S E, App Phys Lett 56 157 (1990)Google Scholar
19 Warren, W L, Lenahan, P M, Phys Rev B 42 1773 (1990)Google Scholar
20 Warren, W L, Fong, F C, Poindexter, E H, Geradi, G J, Kanicki, J, J App Phys 70 346 (1991)Google Scholar
21 Jousse, D, Kanicki, J, App Phys Lett 55 1112 (1989)Google Scholar
22 Warren, W L, Lenahan, P M, Curry, S E, Phys Rev Lett 65 207 (1990)Google Scholar
23 Warren, W L, Kanicki, J, Robertson, J, Lenahan, P M, App Phys Lett 59 1699 (1991)Google Scholar
24 Kirk, C T, J App Phys 50 4190 (1979)Google Scholar
25 Ngai, K L, Hsai, Y, App Phys Lett 41 159 (1982)Google Scholar
26 Curry, S E, Lenahan, P M, Kanicki, J, Kirk, C T, App Phys Lett 56 1359 (1990)Google Scholar
27 Lenahan, P M, Krick, D T, Kanicki, J, App Surf Sci 39 392 (1989)Google Scholar
28 Street, R A, Mott, N F, Phys Rev Lett 35 1293 (1975)Google Scholar
29 Kastner, M, Adler, D, Fritzsche, H, Phys Rev Lett 37 1504 (1976)Google Scholar
30 Pandey, K C, Phys Rev Lett 49 223 (1982)Google Scholar
31 Makino, T, Maeda, M, Jpn J App Phys 25 1300 (1986)Google Scholar
32 Jousse, D, Kanicki, J, Krick, D T, Lenahan, P M, App Phys Lett 52 445 (1988)Google Scholar
33 Fujita, S, Sasaki, A, J Electrochem Soc 132 398 (1985)Google Scholar
34 Kanicki, J, Sankaran, M, Gelatos, A, Crowder, M S, Tober, E D, App Phys Lett 57 698 (1990)Google Scholar
35 Warren, W L, Kanicki, J, Fong, F C, Buchwald, W R, Harmatz, M, Mat Res Soc Symp Proc 242 687 (1992)Google Scholar
36 Tober, E D, Kanicki, J, Crowder, M S, App Phys Lett 59 1723 (1991);Google Scholar
Tober, E D, Sogari, E, Kanicki, J, Crowder, M S, Mat Res Sco Symp Proc 219 129 (1991)Google Scholar
37 Crowder, M S, Tober, E D, Kanicki, J, App Phys Lett 57 1995 (1990)Google Scholar
38 Robertson, J, Powell, M J, Mat Res Soc Symp Proc 49 215 (1985)Google Scholar
39 Warren, W L, Kanicki, J, Fong, F C, Poindexter, E H, McWhorter, P J, App Phys Lett 61 216 (1992)Google Scholar
40 Chen, D, Viner, J M, Taylor, P C, Kanicki, J, Mat Res Soc Symp Proc 258 661 (1992)Google Scholar
41 Austin, I G, Jackson, W A, Searle, T M, Batt, P K, Phil Mag B 52 271 (1985)Google Scholar
42 Searle, T M, Jackson, W A, Phil Mag B 60 237 (1989)Google Scholar
43 Street, R A, Semiconductors and Semimetals 21B 197 (Academic, NY, 1984)Google Scholar
44 Winer, K, Phys Rev Lett 63 1487 (1989); J Non-Cryst Solids 137 157 (1991)Google Scholar
45 Powell, M J, vanBerkel, C., Franklin, A R, Deane, S C, Milne, W, Phys Rev B 45 4160 (1992)Google Scholar
46 McLean, F B, Boesch, H E, Oldham, T R, in “Ionizing Radiation Effects in MOS Devices and Circuits”, ed Ma, T P, (Wiley 1988)Google Scholar
47 Kakalios, J, Street, R A, Jackson, W B, Phys Rev Lett 59 1037 (1986)Google Scholar
48 Street, R A, Biegelsen, D K, Solid State Commun 33 1159 (1980)Google Scholar
49 Stutzmann, M, Jackson, W B, Solid State Commun 62 153 (1987)Google Scholar
50 Stutzmann, M, Phil Mag B 60 531 (1989)Google Scholar
51 Street, R A, Hack, M, Jackson, W B, 37 4209 (1988)Google Scholar
52 Street, R A, Winer, K, Phys Rev B 40 6236 (1990)Google Scholar
53 Street, R A, Phys Rev B 44 10610 (1991)Google Scholar
54 Robertson, J, App Phys Lett 59 3425 (1991)Google Scholar
55 Moritomo, A, Oozora, S, Kumeda, M, Shimizu, T, Phys Stat Solidi b 119 715 (1983)Google Scholar
56 Winer, K, App Phys Lett 55 1759 (1989)Google Scholar
57 Kanicki, J, Mat Res Soc Symp Proc 118 671 (1988)Google Scholar
58 Warren, W L, Lenahan, P M, Kanicki, J, J App Phys 70 2220 (1991)Google Scholar
59 Warren, W L et al, this volume (1993)Google Scholar
60 Stein, H J, Wells, V A, Hampy, R E, J Electrochem Soc 126 1750 (1979)Google Scholar