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The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys

  • Chih-Chiang Chen (a1), Yoram Lubianiker (a1), J. David Cohen (a1), Jeffrey C. Yang (a2), Subhendu Guha (a2), Paul Wickboldt (a3) and William Paul (a3)...

Abstract

We have carried out a comprehensive study of the electronic properties of two series of optimized a-Si1−xGex:H alloys fabricated at United Solar Systems Corporation (“Uni-Solar”) and Harvard University, encompassing the composition range 0.2 ≤ × ≤ 1.0. Both series of samples exhibit deep defect densities that obey quite accurately the spontaneous bond-breaking model proposed by M. Stutzmann which, by considering how the defect formation energy varies with the position of Fermi energy, we have been able to extend to doped samples.

We have also extended our studies to include measurements of ambipolar diffusion lengths and the effects of light-induced degradation, and thus have been able to demonstrate a direct relation between these transport properties and the measured defect levels before and after degradation.

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[1] Sala, D., Reita, C., Conte, G., Galluzzi, F., and , Grillo, J. Appl. Phys. 67, 814 (1990)
[2] Fuhs, W., and Finger, F., J. Non-Cryst. Solids 114, 387 (1989)
[3] Stutzman, M., Street, R. A., Tsai, C. C., Boyce, J. B., and Ready, S. E., J. Appl. Phys. 66, 569 (1989)
[4] Wang, Q., Antoniadis, H., Schiff, E. A., and Guha, S., Phys. Rev. B 47, 9435 (1993)
[5] Karg, F., Kruhler, W., Moller, M., and Klitzing, K. v., J. Appl. Phys. 60, 2016 (1986)
[6] The Urbach energys for Harvard's samples range from 43 to 45meV. Most of Uni-Solar's samples, the Urbach energys are between 46 to 49meV, a couple of samples' Urbach energys stay between 51 to 52 meV.
[7] Guha, S., Payson, J.S., Agarwal, S.C. and Ovshinsky, S.R., J.Non-Cryst. Solids 97–98, 1455 (1988)
[8] Wickboldt, P., Jones, S.J., Marques, F.C., Pang, D., Turner, W.A., Wetsel, A.E., Paul, W., and Chen, J.H., Philos. Mag. B 64, 655 (1991)
[9] Michelson, C.E., Gelatos, A.V. and Cohen, J.D., Appl. Phys. Lett. 47, 412 (1985)
[10] Cohen, J.D., Unold, T. and Gelatos, A.V., J. Non-Cryst. Solids 141, 142 (1992)
[11] Oheda, H., J. Appl. Phys. 52, 6693 (1981)
[12] Ritter, D., Zeldov, E., and Weiser, K., Appl. Phys. Lett. 49, 791 (1986)
[13] Chen, C.-C., Zhong, F., Cohen, J.D., Yang, J.. and Guha, S., Phys. Rev. B57, R4210 (1998)
[14] Chen, C.-C., Zhong, F., Cohen, J.D., Yang, J.. and Guha, S., Mat. Res. Soc. Symp. Proc. 467, 55 (1997)
[15] Kwon, D., and Cohen, J.D., Mat. Res. Soc. Symp. Proc. 467, 197 (1997)
[16] Chen, C.-C., and Cohen, J.D., unpublished.
[17] Stutzmann, M., Philos. Mag. B 60, 531 (1989)
[18] Unold, T., Cohen, J.D., and Fortmann, C.M., Appl. Phys. Lett. 64, 1714 (1994)
[19] Okamoto, H., and Hamakawa, Y., Solid State Commun. 24, 23 (1977)
[20] Antoniadis, H., and Schiff, E.A., Phys. Rev. B 43, 13957 (1993)
[21] Karg, F., Krühler, W., Möiler, M., and Klitzing, K.v., J. Appl. Phys. 60, 2016 (1986)
[22] Wickboldt, P., Pang, D., Paul, W., Chen, J.H., Chen, C.-C., and Cohen, J.D., Mat. Res. Soc. Symp. Proc. 467, 263 (1997)
[23] Zhong, F., Chen, C.-C., Cohen, J.D., Wickboldt, P., and Paul, W., Mat. Res. Soc. Symp. Proc. 377,553 (1995)
[24] Crandall, R.S., private communication.
[25] Unold, T., Mat. Res. Soc. Symp. Proc. 336, 287 (1994)

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The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys

  • Chih-Chiang Chen (a1), Yoram Lubianiker (a1), J. David Cohen (a1), Jeffrey C. Yang (a2), Subhendu Guha (a2), Paul Wickboldt (a3) and William Paul (a3)...

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