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Electronic Stopping Power for Low Energy Ions

Published online by Cambridge University Press:  25 February 2011

N. Azziz ,
K. W. Brannon  and
G. R. Srinivasan
N. Azziz
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
K. W. Brannon
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
G. R. Srinivasan
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
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Abstract

A procedure to be used in ion implantation calculations has been developed to determine the stopping power of an ion at low energy as a function of its effective charge. The ion effective charge accounts for screening of the ion and has been found to have considerable effect on the stopping power through its dependence on the target electron density. Steps in the procedure include: the calculation of the Fermi momentum of the target, calculation of the relative velocity between the projectile and target electron cloud, determination of the screening distance for the ion, and calculation of the proton stopping power Sp according to the density-functional formalism. The ion stopping power is then is the ion effective charge. The procedure can be applied to semiconductors and metals. Comparisons are reported with the predictions of the Firsov and Lindhard methods which do not include any effective charge or shell structure considerations. The computer program MARLOWE has been modified to include this method for calculating the stopping power. Results in the form of implanted boron profiles in silicon will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 71
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Echenique, P., Nieminen, R., and Ritchie, R., Solid State Comm. 37, 779 (1981).Google Scholar
[2] Bohr, Niels, Mathematisk-Fysiske Meddeleser XVIIII, 8 (1948).Google Scholar
[3] Brandt, W. and Kitagawa, M., Phys. Rev.B 25, 5631 (1982).CrossRefGoogle Scholar
[4] Kreussler, S., Varelas, C. and Brandt, W., Phys. Rev. B23, 82 (1981).Google Scholar
[5] Biersack, J. P. and Ziegler, J. F., IBM Report R.C. 9380, (1982). See also: p. 122–156 of “Ion Implantation Techniques”, Vol. 10, edit. H. Ryssel, H. Glawisching-Springer Berlin 1982 and J. Ziegler, J. P. Biersack and U. Littmark, “Stopping Ranges of Ions in Matter”, Vol. 1, Pergamon Press, N.Y. 1985.Google Scholar
[6] Brandt, W. and Reinheimer, J., Phys. Rev. B 8, 3104 (1970).Google Scholar
[7] Ritchie, R. H., Phys. Rev. B 114, 644 (1959).Google Scholar
[8] Robinson, M. T. and Torrens, I. M., Phys. Rev. B9, 5008 (1974).Google Scholar
[9] Michel, A. E., Kastl, R. H., Mader, S. R., lasters, B. J., and Gardner, J. A., Appl. Phys. Lett. 44, 404 (1984).CrossRefGoogle Scholar