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Electronic Properties of Microcrystalline Silicon investigated by Photoluminescence Spectroscopy on Films and Devices

  • R. Carius (a1), T. Merdzhanova (a1) and F. Finger (a1)

Abstract

Photoluminescence spectroscopy has been applied to investigate localized states in microcrystal-line silicon (μc-Si:H) films and to address the problem of the changes of the electronic properties of this material upon changes of the hydrogen dilution during film growth. By a comparison of photoluminescence and Raman spectra on device grade sample series prepared at different silane concentration in hydrogen (SC) by PE-CVD and HW-CVD a correlation between the micro-structure and the photoluminescence energy is found. It is proposed that the density of band tail states is reduced with increasing SC leading to the increase of the PL energy as well as to the increase of Voc of solar cells. The reason for the tails and their reduction is not clear but strain might play a crucial role and the amorphous hydrogenated phase might be effective for strain reduction.

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Electronic Properties of Microcrystalline Silicon investigated by Photoluminescence Spectroscopy on Films and Devices

  • R. Carius (a1), T. Merdzhanova (a1) and F. Finger (a1)

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