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Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth

  • Jack P. Salerno (a1), R. W. Mcclelland (a1), J. G. Mavroides (a1), John C. C. Fan (a1) and A. F. Witt (a2)...

Abstract

The electronic properties of tilt boundaries with misorientation angles ranging from 0 to 30° in n-type GaAs bicrystal layers have been investigated. The current-voltage and capacitance-voltage characteristics are consistent with a double-depletion-region model. The height of the grain boundary potential barrier remains constant while the density of grain boundary states varies with misorientation angle. Deep level transient spectroscopy has revealed the presence of two bands of grain boundary states at approximately 0.65 and 0.9 eV below the conduction band. These states are attributed to bond reconstruction at the grain boundary.

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