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Electronic Levels and Properties of the Selfinterstitials in Irradiated Silicon

Published online by Cambridge University Press:  26 February 2011

Kh. A. Abdullin ,
B. N. Mukashev ,
M. F. Tamendarov  and
T. B. Tashenov
Kh. A. Abdullin
Affiliation:
Physical-Technical Institute, Kazakh Academy of Sciences, 480082, Alma-Ata, Republic of Kazakhstan
B. N. Mukashev
Affiliation:
Physical-Technical Institute, Kazakh Academy of Sciences, 480082, Alma-Ata, Republic of Kazakhstan
M. F. Tamendarov
Affiliation:
Physical-Technical Institute, Kazakh Academy of Sciences, 480082, Alma-Ata, Republic of Kazakhstan
T. B. Tashenov
Affiliation:
Physical-Technical Institute, Kazakh Academy of Sciences, 480082, Alma-Ata, Republic of Kazakhstan
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Abstract

DLTS studies of electronic states and properties of the selfinterstitial in α-irradiated p-Si and n-Si are performed. The injection-enhanced annealing is observed for two traps E2 (Ec -0.39 eV) and El (Ec -0.26 eV) in p-Si. The annealing of E2 and E1 are simultaneous with the growth of hole traps connected with vacancy (V), Ci and Ali. It is concluded that the observed electronic levels belonq to different charge states of silicon selfinterstitial. The conclusion is confirmed by the differences of cross sections of the formation of Ali and Ci, by the influence of the zero and reverse bias conditions on the introduction rate and optical annealing of the E2 state in p-Si as well as by DLTS spectra of n-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1109
Copyright
Copyright © Materials Research Society 1992

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References

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