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The Electronic Contribution to The Elastic Constants of Strained III-V Materials Under High Magnetic Fields

Published online by Cambridge University Press:  15 February 2011

Kamakhya P Ghatak ,
B. Nag  and
G. Mazumder
Kamakhya P Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, INDIA
B. Nag
Affiliation:
Department of Applied Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, INDIA
G. Mazumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700032, INDIA
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Abstract

In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of k.p theory. It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively. The strain enhances the numerical values of the elastic constants. The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 109
Copyright
Copyright © Materials Research Society 1995

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References

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