Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-25T05:57:46.509Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Characterization of Mercuric Iodide Gamma Ray Spectrometers*

Published online by Cambridge University Press:  21 February 2011

Vernon M. Gerrish
Vernon M. Gerrish*
Affiliation:
EG&G Energy Measurements, Inc., Santa Barbara Operations, Goleta, CA 93117
Get access

Abstract

During the past four years the yield of high-resolution mercuric iodide (HgI2) gamma ray spectrometers produced at EG&G/EM has increased dramatically. Data are presented which demonstrate a strong correlation between starting material and spectrometer performance. Improved spectrometer yields are attributed to the method of HgI2 synthesis and to material purification procedures. Data are also presented which show that spectrometer performance is correlated with hole mobility-lifetime products. In addition, the measurement of Schottky barrier heights on HgI2 spectrometers has been performed using I-V curves and the photoelectric method. Barrier heights near 1.10 eV have been obtained using various contacts and contact deposition methods. These data suggest the pinning of the Fermi level at midgap at the HgI2 surface, probably due to surface states formed prior to contact deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 129
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

The submitted manuscript has been authored by a contractor of the U.S. Government under Contract No. DE-AC08-88NV10617. Accordingly, the U.S. Government retains a nonexclusive, royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for U.S. Government purposes.

References

REFERENCES

1 Skinner, N.L., Ortale, C., Schieber, M. and Berg, L. van den, “Preparation and evaluation of mercuric iodide for crystal growth,” Nucl. Instr. and Meth. A283 (1989) 119.Google Scholar
2 Gerrish, V. and Berg, L. van den, “Improved yield of high resolution mercuric iodide gamma-ray spectrometers,” Nucl. Instr. and Meth. A299 (1990) 41.Google Scholar
3 Patt, B.E., Beyerle, A.G., Dolin, R.C. and Ortale, C., “Developments in mercuric iodide gamma ray imaging,” Nucl. Instr. and Meth. A283 (1989) 215.Google Scholar
4 Squillante, M.R., Shah, K.S. and Moy, L., “Stabilization of Hgl2 X-ray detectors,” Nucl. Instr. and Meth. A288 (1990) 79.Google Scholar
5 Markakis, J.M., “Mercuric iodide photodetector-cesium iodide scintillator gamma ray spectrometers,” Nucl. Instr. and Meth. A263 (1989) 499.Google Scholar
6 Gerrish, V., “Polarization and gain in mercuric iodide gamma ray spectrometers,” Nucl. Instr. and Meth. A322 (1992) 402.Google Scholar
7 Mellet, J. and Friant, A., “I(t), I(V) and surface effect studies of vapor grown and solution grown HgI2 detectors,” Nucl. Instr. and Meth. A283 (1989) 199.CrossRefGoogle Scholar
7 Whited, R.C. and Berg, L. van den, “Native defect compensation in HgI2 crystals,” IEEE Trans. Nucl. Sci., NS–24(1) (1977) 165.CrossRefGoogle Scholar
8 Sheinkman, M.K., “Possibility of Auger recombination in multiply charged centers in germanium and silicon,” Sov. Phys.-Solid State, Vol. 7, No. 1 (1965) 18.Google Scholar
9 Takeshima, M., “Auger recombination in InAs, GaSb, InP, and GaAs,” J. Appl. Phys. 43 (1972) 4114.Google Scholar
10 Schroder, D.K., 1990, Semiconductor Material and Device Characterization, John Wiley & Sons, Inc.Google Scholar
11 Sze, S.M., 2nd ed., 1981, Physics of Semiconductor Devices, John Wiley and Sons.Google Scholar
12 James, K., Gerrish, V., Cross, E. and Markakis, J., “Effect of HgI2 crystal nonuniformities on gamma ray response,” Nucl. Instr. and Meth. A322 (1992) 390.Google Scholar