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Electronic Characterization and Light-Induced Degradation in nc-Si:H Solar Cells

  • P. G. Hugger, Shouvik Datta (a1), P. T. Erslev (a2), Guozhen Yue (a3), Gautam Ganguly (a4), Baojie Yan (a5), Jeffrey Yang (a6), Subhendu Guha (a7) and J. D. Cohen (a8)...

Abstract

The electronic properties of working nanocrystalline silicon (nc-Si:H) solar cell devices with conversion efficiencies up to 8.6% were studied using junction capacitance methods. The set of devices examined were deposited on both specular stainless steel substrates and Ag/ZnO textured back reflectors. These devices included nc-Si:H grown under constant H2 dilution, and also with profiled H2 dilution to control the crystallite sizes and volume fraction. Transient photocapacitance and transient photocurrent spectroscopies were used to obtain sub-band-gap optical spectra. A comparison of these two kinds of spectra also allowed us to deduce the minority carrier collection fractions as a function of temperature and light-induced degradation. Light-soaking was found to cause a distinct decrease in minority carrier collection, as well as a consistent decrease in defects responding to drive-level capacitance profiling. A tentative microscopic model is proposed that accounts for these degradation effects in nc-Si:H.

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