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Electron Transport in a-Si1-xGex:H Solar Cells

Published online by Cambridge University Press:  21 February 2011

Qi Wang ,
Homer Antoniadis ,
E. A. Schiff  and
S. Guha
Qi Wang
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244–1130
Homer Antoniadis
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244–1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse NY 13244–1130
S. Guha
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084
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Abstract

We report a study of the correlation between solar cell parameters and electron transport parameters in a series of a-Si1-xGex:H alloys with bandgaps spanning the range 1.42 – 1.72 eV. Fill factors and open circuit voltages were measured in p-i-n solar cells with 0.32 μm thick i-layers. The electron drift mobility and deep-trapping mobility-lifetime product were measured using transient photocurrent techniques on p-i-n cells with thicker i-layers. The open circuit voltage tracked the bandgap accurately. Both the electron drift mobility and the deep-trapping mobility lifetime product correlated reasonably well with the fill factor measured with illumination absorbed near the p-i interface. We present a discussion of the relationship of the fill factor to these transport parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 881
Copyright
Copyright © Materials Research Society 1992

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References

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