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Electron Transport and Conduction-Band-Tail States in a-Si:H Deposited with a Remote Hydrogen Plasma

Published online by Cambridge University Press:  01 January 1993

C.E. Nebel ,
R.A. Street ,
N.M. Johnson  and
J. Walker
C.E. Nebel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47,D-7000 Stuttgart 80, Germany
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd.,Palo Alto, California 94304, USA
N.M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd.,Palo Alto, California 94304, USA
J. Walker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd.,Palo Alto, California 94304, USA
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Abstract

Electron transport properties of a-Si:H prepared in a remote hydrogen plasma deposition reactor (RHPD) at TD = 400°C were investigated in the temperature regime 110 K ≤ T ≤ 300 K by time-of-flight and post-transit spectroscopy experiments. Based on these data the conduction-band-tail state distribution was calculated. In the energy range 85 meV ≤ Ec- E ≤ 350 meV below the mobility edge Ec the tail is well described by an exponential distribution with a characteristic energy of ≃ 21 meV. Deeper in the mobility gap (Ec -E > 350 meV) the tail smoothly passes over into the defect density which is approximately six orders of magnitude smaller than at the mobility edge. Comparisons with data deduced on conventionally prepared a-Si:H (RF-, DC-glow discharge) at TD = 230 °C show that electron transport and the conduction band tail of the RHPD material are comparable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 97
Copyright
Copyright © Materials Research Society 1993

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References

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