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Electron Transmission Through Modified Schottky Barriers

Published online by Cambridge University Press:  17 March 2011

Kevin L. Jensen
Kevin L. Jensen*
Affiliation:
Code 6840, ESTD, Naval Research Laboratory Washington, DC 20375-5347, USA
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Abstract

The effects of a Coulomb-like potential in the Schottky barrier existing between a material-diamond interface is analyzed. The inclusion is intended to mimic the effects of an ionized trap within the barrier, and therefore to account for charge injection into the conduction band of diamond via a Poole-Frenkel transport mechanism. The present treatment is to provide a qualitative account of the increase in current density near the inclusion, which can be substantial. The model is first reduced to an analytically tractable one-dimensional tunneling problem addressable by an Airy Function approach in order to investigate the nature of the effect. A more comprehensive numerical approach is then applied. Finally, statistical arguments are used to estimate emission site densities using the results of the aforementioned analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D14.4.1
Copyright
Copyright © Materials Research Society 2001

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References

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