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Electron Stimulated Desorption of Deuterium from GaN (0001) Surface

Published online by Cambridge University Press:  11 February 2011

Y. Yang ,
J. Lee  and
B. D. Thoms
Y. Yang
Affiliation:
Georgia State University, Atlanta, GA
J. Lee
Affiliation:
Georgia State University, Atlanta, GA
B. D. Thoms
Affiliation:
Georgia State University, Atlanta, GA
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Abstract

Temperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons. TPD of the deuterated surface without electron exposure shows a broad D2 desorption feature with a peak desorption temperature at ∼400 °C. Electron exposure results in a decrease in intensity of the desorption peak which is attributed to removal of surface deuterium by electron stimulated desorption (ESD). This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombinative desorption is first order in deuterium coverage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.30
Copyright
Copyright © Materials Research Society 2003

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