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Electron Scattering by Native Defects in Ill-V Nitrides and their Alloys

Published online by Cambridge University Press:  15 February 2011

L. Hsu  and
W. Walukiewicz
L. Hsu
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Materials Science Division, Lawrence Berkeley National Lab, Berkeley CA 94720
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Abstract

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of AlxGal1−xN alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 513
Copyright
Copyright © Materials Research Society 1996

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