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Electron Paramagnetic Resonance Study of Ion-Implanted Photorefractive Crystals

Published online by Cambridge University Press:  10 February 2011

A. Darwish ,
D. Ila ,
E. K. Willams ,
D. B. Poker  and
D. K. Hensley
A. Darwish
Affiliation:
Center for nonlinear optics and materials and Laser Matter Research Lab, Al A&M University, PO BOX 245, Normal Al, 35762
D. Ila
Affiliation:
Center for Irradiation of Materials, Normal, Al 35762
E. K. Willams
Affiliation:
Center for Irradiation of Materials, Normal, Al 35762
D. B. Poker
Affiliation:
Solid state Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831.
D. K. Hensley
Affiliation:
Solid state Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831.
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Abstract

The effect of the ion implantation (Fe) on LiNbO3, MgO, and A12O3 crystals is studied using electron paramagnetic resonance (EPR). EPR measurements on these crystals were performed as a function of fluence at room temperature. The fluence was 1 × 1014 and 1 × 1016 ions/cm2. The unpaired carrier concentration increases with increasing fluence. The photosensitivity of these crystals was determined by observing in situ the effect of the laser illumination on the EPR signal and measuring the decay and the growth of the EPR signal. The EPR signal of Fe3+ was found to decrease in both MgO, and Al2O3; and was found to increase in LiNbO3. This indicated that in case of MgO, and A12O3 Fe3+ will transfer into Fe2+/Fe4+, but in case of LiNbO3 Fe2+/ Fe4+ will transfer into Fe3+; increasing the EPR signal. This was found primary due to some Fe2+ and Fe4+ ions, which is not intentionally doped on the LiNbO3 crystal but exist as a defect on the crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 369
Copyright
Copyright © Materials Research Society 1998

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References

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