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Electron Paramagnetic Resonance of Material Properties and Processes*

Published online by Cambridge University Press:  15 February 2011

K. L. Brower
K. L. Brower*
Affiliation:
Sandia National Laboratoriest†, Albuquerque, New Mexico 87185, USA
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Abstract

The purpose of this paper is to demonstrate, primarily for the non-specialist and within the context of new and recent achievements, the diagnostic value of electron paramagnetic resonance (EPR) in the study of material properties and processes. I have selected three EPR studies which demonstrate the elegance and uniqueness of EPR in atomic defect studies and exemplify unusual achievements through the use of new techniques for material measurement and preparation. A brief introduction into the origin, interaction, and detection of unpaired electrons is included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 3: Symposium – Nuclear and Electron Resonance Spectroscopies Applied to Materials Science , 1980 , 71
Copyright
Copyright © Materials Research Society 1981

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Footnotes

†

A U. S. Department of Energy facility.

*

This article was sponsored by the U. S. Department of Energy, Division of Basic Energy Sciences, under Contract DE-AC04-76-DP00789.

References

REFERENCES

1. Coulson, C. A. and Kearsley, M. J., Proc. Roy. Soc. A241, 433 (1957).Google Scholar
2. Watkins, G. D., in Radiation Damage in Semiconductors, (Dunod, Paris, 1965) p. 97.Google Scholar
3. Brower, K. L., Radiat. Eff. 8, 213 (1971).CrossRefGoogle Scholar
4. Lee, Y. H. and Corbett, J. W., Phys. Rev. B 8, 2810 (1973).CrossRefGoogle Scholar
5. Baraff, G. A., Kane, E. O., and Schlüter, M., Phys. Rev. B 21, 5662 (1980).CrossRefGoogle Scholar
6. Kimerling, L. C., in Radiation Effects in Semiconductors, 1976, edited by Urli, N. B. and Corbett, J. W. (Institute of Physics, London, 1977), p. 221.Google Scholar
7. Stein, H. J., Radiat. Eff. 9, 195 (1971).CrossRefGoogle Scholar
8. Bleaney, B. and Stevens, K. W. H, Rept. Progr. Phys. 18, 108 (1953).CrossRefGoogle Scholar
9. Watkíns, G. D. and Corbett, J. W., Phys. Rev. 121, 1001 (1961).CrossRefGoogle Scholar
10. Brower, K. L., Phys. Rev. B 9, 2607 (1974);CrossRefGoogle Scholar
Phys. Rev. B 17, 4130 (1978).Google Scholar
11. Brower, K. L., Phys. Rev. B 5, 4274 (1972).CrossRefGoogle Scholar
12. Sieverts, E. G., Muller, S. H., and Ammerlaan, C. A. J., Phys. Rev. B 18, 6834 (1978).CrossRefGoogle Scholar
13. Halliburton, L. E., Cowan, >D. L., and Holroyd, L. V., Phys. Rev. B 12, 3408 (1975).CrossRefD.+L.,+and+Holroyd,+L.+V.,+Phys.+Rev.+B+12,+3408+(1975).>Google Scholar
14. Lomer, J. N. and Wild, A. M. A., Radiat. Eff. 17, 37 (1973).CrossRefGoogle Scholar
15. Watkíns, G. D., Phys. Rev. B 12, 5824 (1975).CrossRefGoogle Scholar
16. Poole, C. P. Jr., Electron Spin Resonance (Interscience Publishers, New York, 1967).Google Scholar
17. Kevan, L. and Kispert, L. D., /Electron Spin Double Resonance Spectroscopy (John Wiley, New York, 1976).Google Scholar
18. Kaiser, W. and Thurmond, C. D., J. Appl. Phys. 30, 427 (1959).CrossRefGoogle Scholar
19. Pavlov, P. V., Zorin, E. I., Tetel'baum, D. I., and Popov, Yu S., Dokl. Akad. Nauk. SSSR 163, 1128 (1965)Google Scholar
[Soy. Phys. Dokl. 10, 786 (1966)].Google Scholar
20. Mitchell, J. B., Shewchun, J., Thompson, D. A., and Davies, J. A., J. Appl. Phys. 46, 335 (1975).CrossRefGoogle Scholar
21. Mitchell, J. B., Pronko, P. P., Shewchun, J., Thompson, D. A., and Davies, J. A., J. Appl. Phys. 46, 332 (1975).CrossRefGoogle Scholar
22. Brower, K. L. and Peercy, P. S., in Laser and Electron Beam Processing of Materials, edited by White, C. W. and Peercy, P. S. (Academic, New York, 1980), p. 441.CrossRefGoogle Scholar
23. Brower, K. L., Phys. Rev. Lett. 44, 1627 (1980).CrossRefGoogle Scholar
24. Smith, W. V., Sorokin, P. P., Gelles, I. L., and Lasher, G. J., Phys. Rev. 115, 1546 (1959).CrossRefGoogle Scholar
25. Messmer, R. P. and Watkíns, G. D., Phys. Rev. Lett. 25, 656 (1970), andCrossRefGoogle Scholar
Phys. Rev. B 7, 2568 (1973).CrossRefGoogle Scholar
26. Deigen, M. F., Zaritskii, I. M., and Shul'man, L. A., Fiz Tverd. Tela 12, 2902 (1970);Google Scholar
[Sov. Phys.–Solid State 12, 2343 (1971)].Google Scholar
27. Watkíns, G. D. and Troxell, J. R., Phys. Rev. Lett. 44, 593 (1980);CrossRefGoogle Scholar
Phys. Rev. B 22, 921 (1980).CrossRefGoogle Scholar
28. Troxell, J. R., Chatterjee, A. P., Watkíns, G. D., Kimerling, L. C., Phys.Rev. B 12, 5336 (1979).CrossRefGoogle Scholar
29. Watkins, G. D., Chatterjee, A. P., and Harris, R. D., 11th International Conference on Defects and Radiation Effects in Semiconductors (1980), Oiso, Japan.Google Scholar
30. Anderson, P. W., Phys. Rev. Lett. 34, 953 (1975).CrossRefGoogle Scholar
31. Bourgoin, J. C. and Corbett, J. W., Phys. Lett. 38A, 135 (1972).CrossRefGoogle Scholar
32. Deal, B. E., J. Electrochem. Soc. 121, 198C (1974).CrossRefGoogle Scholar
33. Caplan, P. J., Poindexter, E. H., Deal, B. E., Razouk, R. R., J. Appl. Phys. 50, 5847 (1979).CrossRefGoogle Scholar
34. Poindexter, E. H., Caplan, P. J., Deal, B. E., and Razouk, R. R., J. Appl. Phys., to be published.Google Scholar
35. Jap, Y. Nishi. J. Appl. Phys. 10, 52 (1971).Google Scholar
36. Krivanek, O. L., Tsui, D. C., Sheng, T. T., and Kamgar, A., in The Physics of SiO2 and Its Interfaces, edited by Pantelides, S. T. (Pergamon, New York, 1978), p. 356.CrossRefGoogle Scholar
37. de Wit, J. G. and Ammerlaan, C. A. J., in Ion Implantation in Semiconductors, edited by Ruge, I. and Graul, J. (Springer, Berlin, 1971), p. 39.CrossRefGoogle Scholar
38. Laughlin, R. B., Joannopoulos, J. D., and Chadi, D. J., Phys. Rev. B 21, 5733 (1980).CrossRefGoogle Scholar