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Electron Paramagnetic Resonance of Cr4+ in Yx2SiO5

Published online by Cambridge University Press:  10 February 2011

Rakhim R. Rakhimov
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA 23504, USA
Holli D. Horton
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA 23504, USA
George B. Loutts
Affiliation:
Center for Materials Research, Norfolk State University, Norfolk, VA 23504, USA
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Abstract

Chromium-doped yttrium orthosilicate Cr:Y2SiO5 was studied by electron paramagnetic resonance (EPR) method at 9.5–9.7 GHz. EPR transitions were observed for Cr4+ substituting Si4+ in tetrahedral sites of Y2SiO5, and orientation dependence of the single crystal EPR spectrum was studied. The ground state of Cr4+ (electron configuration 3d2) in Y2SiO5 is a spin triplet (S = 1). Rhombic symmetry of the electron magnetic dipole-dipole interaction (zero field splitting) leads to three electron spin terms Tx, Ty and Tz in the absence of the external magnetic field. We have observed the magnetically induced anti-crossing of the terms Ty and Tz.We show that in the vicinity of energy level anti-crossing the linewidths and positions of the resonance lines depend on temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Deka, C., Chai, B. H. T., Shimony, Y., Zhang, X. X., Munin, E., and Bass, M., Appl. Phys. Lett. 61, 2141 (1992).Google Scholar
[2] Loutts, G., Hirnak, S, Basiev, T. T., Doroshenko, M. E., Sigachev, V. B., Shimony, Y., Deka, C., Zhang, X. X., Villeverde, A., Bass, M., and Chai, B. in Growth, Characterization and Aplications of Laser Host and Nonlinear Crystals II, edited by Chai, B. H. T., Proc. SPIE 1863, 31 (1993).Google Scholar
[3] Deka, C., Bass, M., Chai, B. H. T., and Shimony, Y., J. Opt. Soc. Am. B. 10, 1499 (1993).Google Scholar
[4] Koetke, J., Kuck, S., Peterman, K., Huber, G., Cerullo, G., Danailov, M., Magni, V., Qian, L. F., and Svelto, O., Optics Commun. 101, 195 (1993).Google Scholar
[5] Kuleshov, N.V., Mikhailov, V. P., Shcherbitsky, V. G., Menkov, B. I., Danger, T., Glynn, T.J., and Sherlock, R., Optical Materials. 4, 507 (1995).Google Scholar
[6] Hoffman, K. R., Casas-Gonzalez, J., Jacobsen, S. M., and Yen, W. M., Phys. Rev. B. 44, 12589 (1991).Google Scholar
[7] Whitmore, M. H., Sacra, A., and Singel, D., J. Chem. Phys. 98, 3656 (1993).Google Scholar
[8] Budil, D. E., Park, D. G., Burlitch, J. M., Geray, R. F., Dieckmann, R., and Freed, J. H., J. Chem. Phys. 101, 3538 (1994).Google Scholar
[9] Sharp, R. R., J. Chem. Phys. 98, 912 (1993).Google Scholar
[10] Yamauchi, S., and Pratt, D. W., Chem. Phys. Lett. 57, 410 (1978).Google Scholar
[11] Lee, K. M., Dang, L. S., Watkins, G. D., and Choyke, W. J., Solid State Commun. 37, 551 (1981).Google Scholar
[12] Kouskov, V., Sloop, D. J., Weissman, S. I., Lin, T.-S., Chem. Phys. Lett. 232, 165 (1995).Google Scholar
[13] Kobori, Y., Mitsui, M., Kawai, A., and Obi, K., Chem. Phys. Lett. 252, 355 (1996).Google Scholar
[14] Laiho, R., Afanasjev, M. M., Vlasenko, M. P., and Vlasenko, L. S., Phys. Rev. Lett. 80, 1489 (1998).Google Scholar
[15] Pilbrow, J. R.. Transition Ion Electron Paramagnetic Resonance. (Clarendon Press, Oxford, 1990), p. 102.Google Scholar