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Electron Microscopy Studies and Image Simulation of the YBa2Cu3O7−x/ BaF2 Interface

Published online by Cambridge University Press:  15 February 2011

J. L. Lee  and
J. Silcox
J. L. Lee
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

Images of the YBa2Cu3OT7−x (YBCO) / BaF2 interface obtained with a scanning transmission electron microscope (STEM) show a relatively wide (∼40 Å) band of contrast at the interface, despite attempts to orient the interface plane parallel to the beam. Simulation of STEM annular dark field (ADF) images of several different interface geometries suggests that strain is the dominant cause of this wide band of contrast at the interface. In particular, it is the dislocations which run normal to the beam direction which make a significant contribution to the width of the contrast band in the case of this YBCO / BaF2 interface. A line scan taken across the interface using energy dispersive X-ray spectrometry (EDX) suggests that there is no significant Ba concentration at the interface, indicating that Z-contrast is not the primary contrast mechanism in these ADF images of the YBCO / BaF2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 259
Copyright
Copyright © Materials Research Society 1995

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