Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-22T16:27:38.452Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - implanted GaN

Published online by Cambridge University Press:  01 February 2011

S. Dalmasso ,
R. W. Martin ,
P. R. Edwards ,
V. Katchkanov ,
K. P. O'Donnell ,
K. Lorenz ,
E. Alves ,
U. Wahl ,
B. Pipeleers  and
V. Matias
...Show all authors
S. Dalmasso
Affiliation:
Department of Physics, University of Strathclyde, Glasgow G4 0NG, U.K.
R. W. Martin
Affiliation:
Department of Physics, University of Strathclyde, Glasgow G4 0NG, U.K.
P. R. Edwards
Affiliation:
Department of Physics, University of Strathclyde, Glasgow G4 0NG, U.K.
V. Katchkanov
Affiliation:
Department of Physics, University of Strathclyde, Glasgow G4 0NG, U.K.
K. P. O'Donnell
Affiliation:
Department of Physics, University of Strathclyde, Glasgow G4 0NG, U.K.
K. Lorenz
Affiliation:
Dept. Física, Instituto Tecnológico e Nuclear, Sacavém PT-2685–953, Portugal
E. Alves
Affiliation:
Dept. Física, Instituto Tecnológico e Nuclear, Sacavém PT-2685–953, Portugal
U. Wahl
Affiliation:
Dept. Física, Instituto Tecnológico e Nuclear, Sacavém PT-2685–953, Portugal
B. Pipeleers
Affiliation:
Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
V. Matias
Affiliation:
Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
A. Vantomme
Affiliation:
Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
Y. Nakanishi
Affiliation:
Dept. of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441–8580, Japan
A. Wakahara
Affiliation:
Dept. of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441–8580, Japan
A. Yoshida
Affiliation:
Dept. of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441–8580, Japan
Get access

Abstract

GaN films doped with rare earth (RE) elements have attracted considerable attention due to the unique optical luminescent properties of the RE intra 4ƒ(n)-shell electron transitions which lead to sharp blue (Tm), green (Er) and red (Eu) emissions. This paper presents an overview of investigations of GaN films implanted with each of these ions using a combination of electron-beam and optical techniques. The ion implantations were performed under a wide range of conditions, covering variations in fluences, energies and temperatures and followed by different high-temperature annealing steps. The resulting RE:GaN films were analysed using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Elemental microanalysis data obtained by wavelength dispersive X-ray analysis (WDX) is correlated with simultaneously collected room temperature CL spectra.

WDX allows the quantification of the RE elemental concentrations in GaN down to ∼ 0.03 at. % in very thin layers (∼ 100 nm deep). Furthermore, by varying the incident electron beam energy, details concerning the depth profile of RE implants can be determined. The effects of both implantation conditions and rapid thermal annealing on the depth profile and on the luminescence properties are reported. CL measurements performed on annealed samples reveal sharp visible and near IR emission lines characteristic of the RE3+ intra-4ƒ(n) atomic shell transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Steckl, A. J. et al., J-Selected Topics in Quantum Electronics, 8, 749 (2002) and references therein.Google Scholar
[2] Lozykowski, H.J. et al., Appl. Phys. Lett., 74, 1129 (1999).Google Scholar
[3] Alves, E. et al., Mod. Phys. Lett. B 15, 28–29, 1281 (2001).Google Scholar
[4] Lorenz, K. et al., E-MRS 2003, Mat. Sci., Eng. B, to be publishedGoogle Scholar
[5] Vantomme, A. et al, Nucl. Instr. Meth., B175–177, 148 (2001).Google Scholar
[6] Nakanishi, Y. et al, Proceedings of International workshop on Nitride Semiconductors, 486 (2001).Google Scholar
[7] Nakanishi, Y. et al, Appl. Phys. Lett., 81, 1943 (2002).Google Scholar
[8] Martin, R.W. et al, phys. stat. sol. (a) 192, 117 (2002).Google Scholar
[9] Martin, R.W. et al., Mat. Res. Symp. Soc. Proc., 743, L6. 15 (2003).Google Scholar
[10] Dalmasso, S. et al., MSM Cambridge 2003 proceedings, to be publishedGoogle Scholar
[11] Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, (Pergamon Press, New York, 1985).Google Scholar
[12] Monteiro, T. et al., Physica. B, 308–310, 22 (2001).Google Scholar
[13] Thaik, M. et al., Appl. Phys. Lett., 71, 2641 (1999).Google Scholar
[14] Steckl, A.J. et al., Appl. Phys. Lett., 75, 2184 (1999).Google Scholar
[15] Leroux, M. et al., J. Appl. Phys., 86, 3721 (1999).Google Scholar