Hostname: page-component-7c8c6479df-nwzlb Total loading time: 0 Render date: 2024-03-29T05:06:44.146Z Has data issue: false hasContentIssue false

Electron Field Emission from Undoped and Doped DLC Films

Published online by Cambridge University Press:  10 February 2011

V.G. Litovchenko
Affiliation:
Institute of Semiconductor Physics, 45 Prospekt Nauki, 252650 Kiev, UKRAINE. Fax:(380-44) 265 83 42
A.A. Evtukh
Affiliation:
Institute of Semiconductor Physics, 45 Prospekt Nauki, 252650 Kiev, UKRAINE. Fax:(380-44) 265 83 42; E-mail:Evt@book.semicond.kiev
N.I. Klyui
Affiliation:
Institute of Semiconductor Physics, 45 Prospekt Nauki, 252650 Kiev, UKRAINE. Fax:(380-44) 265 83 42
YU.M. Litvin
Affiliation:
Institute of Semiconductor Physics, 45 Prospekt Nauki, 252650 Kiev, UKRAINE. Fax:(380-44) 265 83 42
S.Yu. Kudzinovsky
Affiliation:
Institute of Semiconductor Physics, 45 Prospekt Nauki, 252650 Kiev, UKRAINE. Fax:(380-44) 265 83 42
A.G. Chakhovskoi
Affiliation:
ECE Department, University of California, Davis, USA, CA 95616, chakhovs@ece.ucdavis.edu
T. E. Felter
Affiliation:
Lawrence Livermore national Laboratory, Livermore, felter@llnl.gov
Get access

Abstract

Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH4:H2 and CH4:H2:N2 gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8 % (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10−6 Torr using the diode method with emitter-anode spacing set at 20 gm. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (Vth) varies in a complex manner with nitrogen content. As a function of nitrogen content, Vth initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp3 bonded) matrix with graphite-like inclusions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Evtukh, A.A., Litovchenko, V.G., Marchenko, R.I., Romanuyk, B.N. in: MRS Spring Meeting (San-Francisco), Abstracts (1995) p.396.Google Scholar
2. Lee, S., Lee, Su., Lee, Sun., and Jeon, D., in Proceedings of the 9th IVMC'96, (1996) pp.283287.Google Scholar
3. Groning, O., Kuttel, O.M, Groning, P., Schlapbach, L., AppL Surf Sci., 111, 135 (1997).Google Scholar
4. Litovchenko, V.G., Evtukh, A.A., Marchenko, R.I., Klyui, N.I., Semenovich, V.A., Appl. Surf. Sci., 111,213 (1997).Google Scholar
5. Litovchenko, V.G., Evtukh, A.A, Marchenko, R.I., Klyui, N.I., and Semenovich, V.A., J. Micromech. Microeng. 7, 1 (1997).Google Scholar
6. Kosarev, A.I., Zhirnov, V.V., Vinogradov, A.J., Shutov, M.V., Bormatova, L.V., Givargizov, E.I., and Felter, T.E., Mat.Res.Soc.Symp.Proc. 509 (1998) 89.Google Scholar
7. Park, K.C., Moon, J.H., Chung, S.J., Jung, J.H., Ju, B.K., Oh, M.H., Milue, W.I., Han, M.K., Jang, J., in Proceedings of the 9th IVMC'96, (1996) pp.263267.Google Scholar
8. Chi, E.J., Shim, J.Y., Baik, H.K., in Proceedings of the 11th IVMC 98, (1998) pp.204205.Google Scholar
9. Evtukh, A.A., Litovchenko, V.G., Klyui, N.I., Marchenko, R.I., Kudzinovski, S.Yu., in Proceedings of the 11th VMC'98, (1998) pp.232233..Google Scholar
10. Tong, William M,. Pan, Lawrence S., Felter, Thomas E., Anders, Simone, Cossy-Favre, Aline, Stammler, Thomas, Mat. Res. Soc. Symp. Proc., 509 (1998) 155.Google Scholar
11. Park, K.C., Moon, J.H., Chung, S.J., Jung, J.H., Ju, B.K., Oh, M.H., Milue, W.I., Han, M.K., Jang, J., in Proceedings of the 9th IVMC'96, (1996) pp.298302 Google Scholar
12. Demichelis, F., Rong, X.F. et al. , Diamond and Related Materials. 4(4), 361 (1995).Google Scholar
13. Klyui, N.I., Romanyuk, B.N., Litovchenko, V.G., Skarban, B.N., Mitus, V.A., Semenovich, V.A., Dub, S.N., Journal of CVD, 5, 305 (1997).Google Scholar