Skip to main content Accessibility help
×
Home

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

  • Yumei Xing (a1), Jihua Zhang (a1), Yuehui Yu (a1), Zhaorui Song (a1) and Dashen Shen (a2)...

Abstract

High intensity electron field emissions were obtained from SiC/Si heterostructures formed by high temperature carbon implantation into silicon and subsequently etching of the top silicon layer. Implantation processes were performed at 700 °C with a dose of 3.0 to 8.0 x 1017 ions/cm2. Post-implantation annealing in argon at 1250 °C for 5h was done for partial samples. β-SiC precipitates were easily formed and embedded in silicon at the interface of SiC/Si heterostructures during high temperature carbon implantation for all samples. The densely distributed small protrusions led to efficient electron emission. Implantation dose scarcely impacted the electron emission characteristics when it reached to a definite value. After annealing, the density of protrusions at the interface of SiC/Si heterostructures became smaller since β-SiC precipitates were grown into larger sizes, which caused to a relatively inefficient electron emission.

Copyright

References

Hide All
1 Fan, S., Chapline, M.G., Franklin, N.R., Tombler, T. W., Cassell, A.M., and Dai, H., Science. 283, 512 (1999).10.1126/science.283.5401.512
2 Carey, J.D., Forrest, R.D., and Silva, S.R.P., Appl. Phys. Lett. 78, 2339 (2001).10.1063/1.1366369
3 Ilie, A., Ferrari, A.C., Yagi, T., and Robertson, J., Appl. Phys. Lett. 76, 2627 (2000).10.1063/1.126430
4 Choi, M.S., Kim, J. H., and Kim, Y.S., J. Non-Crystalline Solids. 324, 187 (2003).10.1016/S0022-3093(03)00331-4
5 Chen, D., Wong, S.P., Cheung, W.Y., Wu, W., Luo, E.Z., Xu, J.B., Wilson, I.H., and Kwok, R.W.M., Appl. Phys. Lett. 72, 1926 (1998).10.1063/1.121229
6 Tsang, W.M., Wong, S.P., and Lindner, J.K.N., Appl. Phys. Lett. 81, 3942 (2002).10.1063/1.1520715
7 Lo, H.C., Das, D., Hwang, J.S., Chen, K.H., Hsu, C.H., Chen, C.F., and Chen, L.C., Appl. Phys. Lett. 83, 1420 (2003).10.1063/1.1599967
8 Xing, Y.M., Zhang, J.H., Yang, W.W., Yu, Y. H., Song, Z. R., Lin, Z.X., and Shen, D.S., Appl. Phys. Lett. 84, 5461 (2004).10.1063/1.1767958
9 Lindner, J.K.N., Appl. Phys. A. 77, 27 (2003).10.1007/s00339-002-2062-8
10 Werner, P., Eichler, S., Mariani, G., Kögler, R., and Skorupa, W., Appl. Phys. Lett. 70, 252 (1997).10.1063/1.118381

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

  • Yumei Xing (a1), Jihua Zhang (a1), Yuehui Yu (a1), Zhaorui Song (a1) and Dashen Shen (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed