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Electron Channelling Contrast Imaging (ECCI) of Dislocations in Bulk Specimens

Published online by Cambridge University Press:  26 February 2011

J.T. Czernuszka ,
N.J. Long ,
E.D. Boyes  and
P. B. Hirsch
J.T. Czernuszka
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK.
N.J. Long
Affiliation:
El Dupont de Nemours, Central Research and Development Department, Wilmington, DE 19880–0356, USA
E.D. Boyes
Affiliation:
El Dupont de Nemours, Central Research and Development Department, Wilmington, DE 19880–0356, USA
P. B. Hirsch
Affiliation:
El Dupont de Nemours, Central Research and Development Department, Wilmington, DE 19880–0356, USA
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Abstract

Dislocations have been imaged in bulk specimens of Si using a FEG SEM operating at 30keV and 100keV, without using an energy filter, but by image processing of the back scattered electron signal collected by a highly efficient detector. The dislocation contrast is greater at 30 keV than at 10OkeV. Ilowever, the depth to which useful information may be obtained is greater at 1O0keV (˜210nm) than at 3OkeV (˜95nm). The final depth to which dislocations can be imaged is strongly dependent on image processing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 289
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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