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Electron Beam Study of Silicide Schottky Diodes

Published online by Cambridge University Press:  15 February 2011

H.-C. W. Huang ,
C. F. Aliotta  and
P. S. Ho
H.-C. W. Huang
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (U.S.A.)
C. F. Aliotta
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (U.S.A.)
P. S. Ho
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (U.S.A.)
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Abstract

An electron-beam-induced voltage (EBIV) technique has been developed to measure the barrier height of Schottky diodes. The principle of this technique is described and is compared with the conventional electron-beam-induced current (EBIC) technique. Applications of both techniques are illustrated in a study of composite silicide Schottky diodes with mixed high and low barrier areas formed using bilayer and co-evaporated Pd-Ti and Pt-Ti films on silicon substrates. The difficulty of using EBIC for quantitative studies of diode characteristics is discussed and contrasted with the advantages of the EBIV technique. The extension of the EBIV technique to contactless measurements of barrier height variation with good lateral resolution is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 319
Copyright
Copyright © Materials Research Society 1982

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References

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