Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-30T00:37:31.279Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Beam Processing of Semiconductors

Published online by Cambridge University Press:  15 February 2011

B. Ahmed  and
R.A. McMahon
B. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 IPZ
R.A. McMahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 IPZ
Get access

Abstract

Electron beams can transfer energy very efficiently to semiconductors. Systems have been developed for rapid heating to temperature around 1000°C under a variety of conditions from adiabatic to isothermal. Pulsed, focused, line and synthesized shaped beams are used to obtain a wide range of thermal cycles. The following applications are described: the annealing of ion-implanted Si, particularly the activation of As implants and shallow implants (Rp<150Å), the annealing of Si and Se in GaAs, the e-beam processing of implanted silicon devices and the improvement of SOS substrate quality. Localized annealing by a computer controlled e-beam and the recrystallization of deposited films on insulators are also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 653
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Kyser, D.F. and Murata, K., Proc. 6thInt. Conf. Electron and Ion Beam Sci. and Technol. Ed. R. Bakish (1974).Google Scholar
2.Hill, C.Google Scholar
3.Kirkpatrick, A.R., Minucci, J.A., Greenwald, A.C., IEEE Trans. Electron Devices 429 (1979).Google Scholar
4.Regolini, J.L., Gibbons, J.F., Sigmon, T.W. and Pease, R.F.W., Appl. Phys. Lett. 34, p. 410 (1979).Google Scholar
5.Krimmel, E.F., Oppolzer, H., Runge, H., Wondrak, W., Phys. Stat. Sol(a) 66, 565 (1981).Google Scholar
6.Yu, T., Soda, K.J., Streetman, B.C., J. Appl. Phys. 51, 4399 (1980).Google Scholar
7.Knapp, J.A. and Picraux, S.T., Appl. Phys. Lett. 38, 873 (1981).Google Scholar
8.McMahon, R.A. and Ahmed, H., Electron Lett. 15, p. 45 (1979).Google Scholar
9.Smith, H.J., Ligeon, E. and Bontemps, A., Appl. Phys. Lett. 37, 1036 (1980).Google Scholar
10.Shah, N.J., McMahon, R.A., Williams, J.G.S. and Ahmed, H.Google Scholar
11.Bentini, G.G., Galloni, R. and Nipoti, R., Appl. Phys. Lett. 36, 661 (1980).Google Scholar
12.Yep, T.O., Fulks, R.T. and Powell, R.A., Appl. Phys. Lett. 38, 162 (1981).Google Scholar
13.McMahon, R.A. and Ahmed, H., J. Vac. Sci. Technol. 16, p. 1840 (1979).Google Scholar
14.Ratnakumar, K.N., Pease, R.F.W., Johnson, N.M. and Meindl, J.D., Appl. Phys. Lett. 35, 463 (1979).Google Scholar
15.Sun, H.T.. Unpublished work.Google Scholar
16.McMahon, R.A., Davis, J.R. and Ahmed, H..Google Scholar
17.Kamins, T.I. and Rose, P.H., J. Appl. Phys. 50, 1308 (1979).Google Scholar
18.McMahon, R.A. and Ahmed, H., IEE Proc. 129, Pt. 1 (1982).Google Scholar
19.Rensch, D.B. and Chen, J.Y.. To be published by E.C.S. (1982).Google Scholar
20.McMillan, G.B., Shannon, J.M. and Ahmed, H.. Published in this issue.Google Scholar
21.McMahon, R.A., Ahmed, H., Speight, J.D. and Dobson, R.M., Electron Lett. 15, 433 (1979).Google Scholar
22.Pollard, C.J., Glaccum, A.E. and Speight, J.D..Google Scholar
23.Speight, J.D., Glaccum, A.E., Machin, D., McMahon, R.A. and Ahmed, H..Google Scholar
24.Godfrey, D.J.. Unpublished work.Google Scholar
25.Shah, N.J., Ahmed, H., Sander, I.R. and Singleton, J.F., Electron Lett. 16, 433 (1980).Google Scholar
26.Bujatti, M., Cetonio, A., Nipoti, R. and Olzi, E., Appl. Phys. Lett. 40, p. 334 (1982).Google Scholar
27.Shah, N.J., Ahmed, H. and Leigh, P.A., Appl. Phys. Lett. 39, 322 (1981).Google Scholar
28.Pianetta, P.A., Stolte, C.A. and Hansen, J.L., APL., 36, 597 (1980).Google Scholar
29.Pitt, M.G.. Unpublished work.Google Scholar
30.Davis, J.R., McMahon, R.A. and Ahmed, H., Electron Lett. 18, 163 (1982).Google Scholar
31.Kamins, T.I. and Greenwald, A.C., Appl. Phys. Lett. 35, p. 235 (1979).Google Scholar
32.Knapp, J.A., Picraux, S.T., Lee, K., Gibbons, J.F., Sedgwick, T.O. & Depp, S.W..Google Scholar
33.Kamins, T.I. and Van Hergen, B.P., IEEE EDL., 2, 313 (1981)Google Scholar