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Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

  • J.M. Gibson (a1), D.C. Joy (a1), R.T. Tung (a1), J.L. Ellison (a1), C. Pimentel (a1) and A.F.J. Levi (a1)...

Abstract

We discuss the use of electron beam induced current measurements in a scanning electron microscope to deduce local Schottky barrier height with high spatial resolution. For theNiSi2/Si system, using UHV-prepared thin “templates”, wedemonstrate the uniformity of barrier heights for A or B single crystal films. In comparison, there is evidence for local variation of barrier height in mixed A+B films. Quantitative models for EBIC dependence on barrier height are discussed. Local variations in barrier height can be overlooked by other techniques and may be much more common than previously suspected.

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Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

  • J.M. Gibson (a1), D.C. Joy (a1), R.T. Tung (a1), J.L. Ellison (a1), C. Pimentel (a1) and A.F.J. Levi (a1)...

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