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Electron beam Annealing of Shallow BF2 Implantations

Published online by Cambridge University Press:  22 February 2011

C. Jaussaud ,
A.M. Cartier  and
J. Escaron
C. Jaussaud
Affiliation:
L.E.T.I. - Commissariat A L'Energie Atomique 85 X, 38041 Grenoble Cedex, France
A.M. Cartier
Affiliation:
L.E.T.I. - Commissariat A L'Energie Atomique 85 X, 38041 Grenoble Cedex, France
J. Escaron
Affiliation:
L.E.T.I. - Commissariat A L'Energie Atomique 85 X, 38041 Grenoble Cedex, France
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Abstract

A multiple scan electron beam system has been used to anneal silicon implanted with BF2 (25 Kev, 1, 2 and 5 × 1015 ions × cm−2 ). The annealing temperatures range from 1000 to 1200° C and the annealing times from 3 to 18 seconds. The curves of sheet resistance as a function of annealing time show a minimum. The increase in sheet resistance at longer annealing times is due to boron outdiffusion. Junction depths have been measured by spreading resistance and are presented. For implanted doses below 2 × 1015 ions × cm−2 boron outdiffusion limits the sheet resistance value at about 100 R Ωand this minimum value corresponds to an increase in junction depths of about 500 Å. For implanted doses of 5 × 1015 ions ×cm−2, 60 Ω sheet resistance can be obtained, but with about 1000 Å increase in junction depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 309
Copyright
Copyright © Materials Research Society 1984

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References

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