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Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

  • M. Finetti (a1), H. Ronkainen (a1), M. Blomberg (a1) and I. Suni (a1)

Abstract

We have investigated the electromigration resistance of Al-Si/Ti multilayer interconnects. For comparison Al-Si and Al-Si/Ti/Al-Si films were also prepared. The linewidths ranged between 1.6 and 5, um. A temperature-ramp resistance analysis was applied at direct wafer level, to detect electrically transport of material and derive the electromigration kinetic parameters in test vehicles with different geometries.

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Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

  • M. Finetti (a1), H. Ronkainen (a1), M. Blomberg (a1) and I. Suni (a1)

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