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Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage

Published online by Cambridge University Press:  22 February 2011

M. A. Korhonen ,
P. Børgesen  and
Che-Yu Li
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
P. Børgesen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853
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Abstract

In the narrow, confined metal interconnects used in the chip level, electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Recently there has been a growing concern on the effects of preceding stress-migration on the subsequent electromigration damage. We present here an electromigration model, which is able to address the effects of stress-migration and mechanical stresses on electromigration lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 695
Copyright
Copyright © Materials Research Society 1992

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References

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