Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-29T06:08:01.335Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids

Published online by Cambridge University Press:  22 February 2011

A. S. Oates  and
J. R. Lloyd
A. S. Oates
Affiliation:
AT&T Bell Laboratories, 555 Union Blvd., Allentown, PA 18103
J. R. Lloyd
Affiliation:
Digital Equipment Corporation, 77 Reed Road, Hudson, MA 01749
Get access

Abstract

Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 269
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Black, J.R., Proc.IEEE, 57(9), 1587, 1969.Google Scholar
2. Turner, T., Wendel, K., Proc.IEEE IRPS, 23, 142, 1985.Google Scholar
3. Lloyd, J.R., Smith, P.M., Prokop, G.S., Mat.Res.Soc.Symp.Proc., 10, 397, 1982.Google Scholar
4. Lytle, S.A., Oates, A.S., J.Appl.Phys, 71(1), 174, 1992.Google Scholar
5. Oates, A.S., Proc.IEEE IRPS, 31, 297, 1993.Google Scholar
6. Kisselgof, L., Baranowski, S.P., Broomfield, M.C., Spooner, T., Elliot, L., Brooke, L., Lloyd, J.R., Proc.SPIE, 1805, 154, 1992.Google Scholar
7. E, J. Sanchez, McKnelly, L.T., Morris, J.W., J.Appl.Phys, 72(7), 3201, 1992.Google Scholar
8. Ryan, V., Lytle, S.A., McCurry, N.M., Favreau, D.P., Chittipeddi, S., Extended Abstracts, Electrochem. Soc. Fall Meeting, Toronto, 1992.Google Scholar
9. Atakov, E.M., Clemens, J.J., Miner, B., Mat.Res.Soc.Symp. 309, 133, 1993.Google Scholar
10. Lloyd, J.R., this conference.Google Scholar