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Electromigration Damage and Failure Distributions in Al-4wt.%Cu Interconnects

Published online by Cambridge University Press:  15 February 2011

W. C. Shih  and
A. L. Greer
W. C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
A. L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
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Abstract

Unpassivated 2.1μm and 1.1μm wide lines of Al-4wt.%Cu have been electromigration-stressed to failure under accelerated testing conditions (up to 300 °C and 2 x 1010 A m-2). The line resistance and microstructure and the development of electromigration damage are discontinuously recorded. Distributions of damage sites (hillocks and voids) along the line lengths are measured, and the evolution of the distributions with stressing time is followed. The distances between damage sites show a clear correlation with the grain structure. Damage and failure sites are concentrated near the end of the lines at which electrons enter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 391
Copyright
Copyright © Materials Research Society 1995

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References

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