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Electrolyte Electroreflectance of Boron Phosphide (BP)

Published online by Cambridge University Press:  10 February 2011

E. Schroten ,
A. Goossens  and
J. Schoonman
E. Schroten
Affiliation:
Laboratory for Applied Inorganic Chemistry, Delft University of Technology, P.O. Box 5045, 2600 GA Delft, The Netherlands, E.Schroten@stm.tudelft.nl
A. Goossens
Affiliation:
Laboratory for Applied Inorganic Chemistry, Delft University of Technology, P.O. Box 5045, 2600 GA Delft, The Netherlands, E.Schroten@stm.tudelft.nl
J. Schoonman
Affiliation:
Laboratory for Applied Inorganic Chemistry, Delft University of Technology, P.O. Box 5045, 2600 GA Delft, The Netherlands, E.Schroten@stm.tudelft.nl
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Abstract

An electrolyte electroreflectance study has been performed on boron phosphide thin films epitaxially grown on silicon (100) substrates. To our knowledge, this paper is the first report on the electrolyte electroreflectance spectrum of BP. All our boron phosphide of 1.5 μm thick films show a pronounced peak at the energy 4.25 eV, indicating a critical point in the valence or conduction band of the semiconductor. Photoreflectance measurements confirm these results. The 4.25 eV energy level is much lower than previously reported direct bandgap values of BP. The electrolyte electroreflectance spectrum of much thinner layers shows, besides the 4.25 eV peak, some other features at still lower incident photon energies caused by interference effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 209
Copyright
Copyright © Materials Research Society 1997

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References

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