Electroluminescence images gained from Cu(In,Ga)Se2 mini-modules under different voltage bias conditions are investigated. The mini-modules of area 20 × 20 cm2 with 42 cells exhibit typically 10-20 localized shunts. The consequences of these shunts on the performance of the individual cells and of the entire module are analyzed quantitatively by evaluating the electroluminescence images. Our evaluation method uses the fact that the electroluminescence intensity at each position in each cell within the module depends on the actual voltage drop over the junction at this specific location. Thus, the analysis of the electroluminescence intensity allows us to reconstruct the current/voltage characteristics of all individual cells in the module. In addition, we provide first simulations using a distributed diode network model to quantitatively explain the experimental results.